DMC6040SSDQ
60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BV
DSS
60V
-60V
R
DS(ON)
Max
40mΩ @ V
GS
= 10V
55mΩ @ V
GS
= 4.5V
110mΩ @ V
GS
= -10V
130mΩ @ V
GS
= -4.5V
Features and Benefits
I
D
T
A
= +25°C
6.5A
5.6A
-3.9A
-3.6A
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
ADVANCE INFORMATION
Q1 N-Channel
Q2 P-Channel
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
SO-8
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D1
D1
D1
D2
D2
D2
S1
Pin1
G1
S2
G2
Top View
Top View
Pin Configuration
G1
S1
Q1 N-Channel MOSFET
G2
S2
Q2 P-Channel MOSFET
Ordering Information
(Note 5)
Part Number
DMC6040SSDQ-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
C6040SD
YY
WW
C6040SD
YY
WW
= Manufacturer’s Marking
C6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
1
4
1
4
Chengdu A/T Site
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
1 of 9
www.diodes.com
April 2016
© Diodes Incorporated
DMC6040SSDQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Continuous Drain Current (Note 7) V
GS
= -10V
Q1
60
±20
5.1
4.1
6.5
5.2
2.1
28
17.2
14.7
Q2
-60
±20
-3.1
-2.5
-3.9
-3.1
-2.1
-19
-17.6
15.4
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
t < 10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.24
0.8
101
61
1.56
1.0
80
49
14.7
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics – N-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
1
Typ
33
37
0.7
1,130
69
42
1.7
20.8
9.4
3.3
3.0
3.6
1.8
20.1
4.3
14.2
7.5
Max
1
100
3
40
55
1.2
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 48V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 0V, I
S
= 1A
pF
Ω
V
DS
= 15V, V
GS
= 0V f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 30V, I
D
= 4.3A
nC
ns
V
GS
= 10V, V
DD
= 30V, R
G
= 6Ω,
I
D
= 4.3A
I
S
= 4.3A, dI/dt = 100A/μs
I
S
= 4.3A, dI/dt = 100A/μs
ns
nC
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. UIS in production with L = 0.1mH, starting T
A
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
2 of 9
www.diodes.com
April 2016
© Diodes Incorporated
DMC6040SSDQ
20.0
18.0
V
GS
= 10V
V
GS
= 5.0V
20
18
16
V
DS
= 5.0V
ADVANCE INFORMATION
16.0
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0 0
14
12
10
8
6
4
2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= 2.8V
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.09
V
GS
= 10V
0.08
0.07
0.06
0.05
0.04
0.03
T
A
= 125°C
T
A
= 150°C
0.045
0.04
V
GS
= 4.5V
T
A
= 85°C
0.035
V
GS
= 10V
0.03
T
A
= 25°C
0.025
T
A
= -55°C
0.02
0.01
0.02
0
2
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2.4
2.2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 8A
V
GS
= 4.5V
I
D
= 5A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
V
GS
= 10V
I
D
= 8A
V
GS
= 4.5V
I
D
= 5A
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
3 of 9
www.diodes.com
April 2016
© Diodes Incorporated
DMC6040SSDQ
2.4
20
18
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.1
ADVANCE INFORMATION
16
I
S
, SOURCE CURRENT (A)
1.8
I
D
= 250µA
I
D
= 1mA
14
12
10
8
6
4
2
T
A
= 150°C
T
A
= 25°C
T
A
= 85°C
1.5
1.2
0.9
T
A
= 125°C
T
A
= -55°C
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1.5
10000
f = 1MHz
10
V
GS
GATE THRESHOLD VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
8
C
iss
1000
6
V
DS
= 30V
I
D
= 4.3A
4
100
C
oss
2
C
rss
10
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0
2
4 6
8 10 12 14 16 18 20 22
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
100
R
DS(ON)
Limited
10
I
D
, DRAIN CURRENT (A)
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
0.1
P
W
= 10ms
P
W
= 1ms
0.01
0.001
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
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April 2016
© Diodes Incorporated
DMC6040SSDQ
1
D = 0.9
D = 0.7
D = 0.5
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 102°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.001
0.00001
0.0001
Electrical Characteristics – P-Channel Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-60
-1
Typ
91
110
-0.7
1,030
49.1
38.7
13.6
9.5
19.4
2.3
3.6
3.7
6.3
58.7
26.1
14.85
8.8
Max
-1
100
-3
110
130
-1.2
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -48V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.5A
V
GS
= -4.5V, I
D
=-3.5A
V
GS
= 0V, I
S
= -1A
pF
Ω
V
DS
= -30V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -30V, I
D
= -5A
nC
ns
V
GS
= -10V, V
DS
= -30V, R
GEN
= 6Ω,
I
D
= -5A
I
S
= -5A, dI/dt = 100A/μs
I
S
= -5A, dI/dt = 100A/μs
ns
nC
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
5 of 9
www.diodes.com
April 2016
© Diodes Incorporated
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