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BUZ90-E3044

Description
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size189KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ90-E3044 Overview

Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ90-E3044 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeTO-220AB
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)320 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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