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EDS1232AATA-TI

Description
128M bits SDRAM WTR (Wide Temperature Range)
File Size514KB,53 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
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EDS1232AATA-TI Overview

128M bits SDRAM WTR (Wide Temperature Range)

DATA SHEET
128M bits SDRAM
WTR (Wide Temperature Range)
EDS1232AATA-TI (4M words
×
32 bits)
Description
The EDS1232AA is a 128M bits SDRAM organized as
1,048,576 words
×
32 bits
×
4 banks. All inputs and
outputs are synchronized with the positive edge of the
clock.
It is packaged in 86-pin plastic TSOP (II).
Pin Configurations
/xxx indicates active low signal.
86-pin Plastic TSOP(II)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDD
DQM0
/WE
/CAS
/RAS
/CS
A11
BA0
BA1
A10(AP)
A0
A1
A2
DQM2
VDD
NC
DQ16
VSSQ
DQ17
DQ18
VDDQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VDDQ
DQ23
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
(Top view)
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSS
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
VSS
NC
DQ31
VDDQ
DQ30
DQ29
VSSQ
DQ28
DQ27
VDDQ
DQ26
DQ25
VSSQ
DQ24
VSS
Features
3.3V power supply
Clock frequency: 166MHz (max.)
Single pulsed /RAS
×32
organization
4 banks can operate simultaneously and
independently
Burst read/write operation and burst read/single write
operation capability
Programmable burst length (BL): 1, 2, 4, 8 and full
page
2 variations of burst sequence
Sequential (BL = 1, 2, 4, 8, full page)
Interleave (BL = 1, 2, 4, 8)
Programmable /CAS latency (CL): 2, 3
Byte control by DQM
Refresh cycles: 4096 refresh cycles/64ms
2 variations of refresh
Auto refresh
Self refresh
Ambient temperature range: –40 to +85°C
A0 to A11,
BA0, BA1
Address inputs
Bank select
DQ0 to DQ31
Data input/output
/CS
Chip select
/RAS
Row address strobe
Column address strobe
/CAS
Write enable
/WE
DQM0 to DQM3
DQ mask enable
CKE
CLK
VDD
VSS
VDDQ
VSSQ
Clock enable
Clock input
Supply voltage
Ground
Supply voltage
for DQ
NC
Ground for DQ
No connection
Document No. E0305E30 (Ver. 3.0)
Date Published September 2004 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2002-2004

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EDS1232AATA-TI EDS1232AATA-60TI EDS1232AATA-75TI
Description 128M bits SDRAM WTR (Wide Temperature Range) 128M bits SDRAM WTR (Wide Temperature Range) 128M bits SDRAM WTR (Wide Temperature Range)
Is it Rohs certified? - incompatible incompatible
Maker - ELPIDA ELPIDA
Parts packaging code - TSOP2 TSOP2
package instruction - TSSOP, TSSOP86,.46,20 TSSOP, TSSOP86,.46,20
Contacts - 86 86
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
access mode - FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time - 5.4 ns 5.4 ns
Other features - AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) - 166 MHz 133 MHz
I/O type - COMMON COMMON
interleaved burst length - 1,2,4,8 1,2,4,8
JESD-30 code - R-PDSO-G86 R-PDSO-G86
JESD-609 code - e0 e0
length - 22.22 mm 22.22 mm
memory density - 134217728 bi 134217728 bi
Memory IC Type - SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width - 32 32
Number of functions - 1 1
Number of ports - 1 1
Number of terminals - 86 86
word count - 4194304 words 4194304 words
character code - 4000000 4000000
Operating mode - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C
organize - 4MX32 4MX32
Output characteristics - 3-STATE 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TSSOP TSSOP
Encapsulate equivalent code - TSSOP86,.46,20 TSSOP86,.46,20
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius) - 235 235
power supply - 3.3 V 3.3 V
Certification status - Not Qualified Not Qualified
refresh cycle - 4096 4096
Maximum seat height - 1.2 mm 1.2 mm
self refresh - YES YES
Continuous burst length - 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current - 0.001 A 0.001 A
Maximum slew rate - 0.24 mA 0.21 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 3 V 3 V
Nominal supply voltage (Vsup) - 3.3 V 3.3 V
surface mount - YES YES
technology - CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING
Terminal pitch - 0.5 mm 0.5 mm
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
width - 10.16 mm 10.16 mm
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