EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

BCW32-L99Z

Description
500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size44KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric Compare

BCW32-L99Z Overview

500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BCW32-L99Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.25 V
Base Number Matches1

BCW32-L99Z Related Products

BCW32-L99Z BCW33-D87Z BCW31-L99Z BCW32-S62Z BCW33-L99Z BCW32-D87Z BCW31-S62Z BCW33-S62Z BCW31-D87Z
Description 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-based maximum capacity 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF
Collector-emitter maximum voltage 32 V 32 V 32 V 32 V 32 V 32 V 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 420 110 200 420 200 110 420 110
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1 1 1 1 - - -
Maker - Texas Instruments - Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 976  1181  2294  277  2077  20  24  47  6  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号