HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
IXFN 34N100
V
DSS
I
D25
R
DS(on)
= 1000V
=
34A
Ω
= 0.28Ω
D
G
S
S
Maximum Ratings
1000
1000
±20
±30
34
136
34
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
International standard packages
•
miniBLOC, with Aluminium nitride
isolation
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
•
Fast intrinsic Rectifier
Applications
•
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
3.0
5.5
±200
T
J
= 25°C
T
J
= 125°C
0.25
100
2
0.28
V
V
nA
µA
mA
Ω
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
•
Temperature and lighting controls
Advantages
•
Easy to mount
•
Space savings
•
High power density
DS98763C(08/03)
© 2003 IXYS All rights reserved
IXFN 34N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
18
40
9200
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18
0.05
K/W
K/W
miniBLOC, SOT-227 B
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 15 V; I
D
= 0.5 • I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1200
300
41
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External),
65
110
30
380
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Inches
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
65
185
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
34
136
1.3
180
330
2
8
A
A
V
ns
ns
µC
A
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 VT
J
= 25°C
T
J
=125°C
T
J
= 25°C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFN 34N100
80
T
J
= 25
O
C
V
GS
=10V
9V
8V
7V
50
40
T
J
= 125
O
C V
GS
=10V
9V
8V
7V
6V
6V
60
I
D
- Amperes
I
D
- Amperes
30
20
10
5V
40
6V
20
5V
0
0
4
8
12
16
20
0
0
5
10
15
20
25
V
DS
- Volts
V
DS
- Volts
Figure 1. Output Characteristics at 25
O
C
2.2
2.0
V
GS
= 10V
Figure 2. Output Characteristics at 125
O
C
V
GS
= 10V
2.2
T
J
= 125
O
C
R
DS(ON)
- Normalized
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
R
DS(ON)
- Normalized
1.9
I
D
= 34A
I
D
=17A
1.6
T
J
= 25
O
C
1.3
30
40
50
1.0
25
50
75
100
125
150
Figure 3.
R
DS(on)
normalized to 0.5 I
D25
value
vs. I
D
50
40
I
D
- Amperes
T
J
- Degrees C
Figure 4.
R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
40
32
I
D
- Amperes
24
16
8
0
I
D
- Amperes
30
T
J
= 125
o
C
20
10
0
3.5
T
J
= 25
o
C
-50
-25
0
25
50
75
100 125 150
4.0
4.5
5.0
5.5
6.0
6.5
7.0
T
C
- Degrees C
V
GS
- Volts
Figure 5. Drain Current vs. Case Temperature
© 2003 IXYS All rights reserved
Figure 6. Admittance Curves
IXFN 34N100
12
10
V
DS
= 500 V
I
D
= 17 A
I
G
= 10 mA
30000
10000
Ciss
V
GS
- Volts
8
6
4
2
0
Capacitance - pF
f = 100kHz
Coss
1000
Crss
100
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 7. Gate Charge
100
80
Figure 8. Capacitance Curves
I
D
- Amperes
60
40
20
0
T
J
= 125
O
C
T
J
= 25
O
C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
1.000
R(th)
JC
- K/W
0.100
0.010
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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