ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET
IXUC 120N10
ISOPLUS220
TM
Electrically Isolated Back Surface
V
DSS
= 100 V
I
D25
= 120 A
R
DS(on)
= 9.5 mΩ
Ω
ISOPLUS 220
TM
Symbol
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
Continuous
T
C
= 25°C; Note 1
T
C
= 90°C, Note 1
T
C
= 25°C; Note 1, 2
T
C
= 90°C, Note 1, 2
Package lead current limit
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
100
±20
120
90
120
90
45
tlb
300
-55 ... +175
175
-55 ... +150
V
V
A
A
A
A
A
mJ
W
°C
°C
°C
°C
V~
N/lb
g
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
l
Low drain to tab capacitance(<15pF)
l
Unclamped Inductive Switching (UIS)
rated
Applications
l
Automotive 42V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l
Power supplies
- DC - DC converters
- Solar inverters
l
Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
Advantages
l
Easy assembly: no screws or isolation
foils required
l
Space savings
l
High power density
G = Gate,
S = Source
* Patent pending
G
D
S
Isolated back surface*
D = Drain,
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
2500
11 ... 65 / 2.4 ...11
2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
7.3
18
2
T
J
= 25°C
T
J
= 125°C
0.2
±200
9.5 mΩ
mΩ
4
20
V
µA
mA
nA
R
DS(on)
V
GS(th)
I
DSS
I
GSS
V
GS
= 10 V, I
D
= 90 A, Note 3
T
J
= 125°C Note 3
V
GS
= 10 V, I
D
= I
D90
,
V
DS
= V
GS
, I
D
= 2 mA
V
DS
= V
DSS
V
GS
= 0 V
V
GS
=
±20
V
DC
, V
DS
= 0
© 2002 IXYS All rights reserved
98901 (2/02)
IXUC 120N10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
220
V
GS
= 10 V, V
DS
= 80 V, I
D
= 50 A
36
88
35
V
GS
= 10 V, V
DS
= 40 A
I
D
= 90 A, R
G
= 4.7
Ω
85
150
70
0.5
0.30
nC
nC
nC
ns
ns
ns
ns
K/W
K/W
ISOPLUS220 OUTLINE
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCH
Source-Drain Diode
Symbol
V
SD
t
rr
Test Conditions
I
F
= 60 A, V
GS
= 0 V
Note 3
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
0.9
80
1.4
V
ns
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
I
F
= 75 A, di/dt = -200 A/µs, V
DS
= 30 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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