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EGP10D

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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EGP10D Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

EGP10A THRU EGP10G
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage -
50 to 400 Volts
*
D
DO-204AL
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically
bonded construction
High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
P
A
T
E
N
T
E
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
®
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
Glass Encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGP
10A
EGP
10B
EGP
10C
EGP
10D
EGP
10F
EGP
10G
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3
)
Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
1.0
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
T
J
, T
STG
22.0
0.95
30.0
1.25
5.0
100
50.0
15.0
50.0
-65 to +150
Amps
Volts
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98

EGP10D Related Products

EGP10D EGP10A EGP10F EGP10B EGP10G EGP10C
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 150 V, SILICON, SIGNAL DIODE, DO-204AL

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