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EGP10J

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size67KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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EGP10J Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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EGP10A
THRU
EGP10K

Superfast recovery time for high efficiency
Glass passivated cavity-free junction, Plastic Case
Low forward voltage, high current capability
Low leakage current
Maximum Ratings
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance: 50
O
C/W Junction to Ambient
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
300V
400V
600V
800V
Maximum
RMS Voltage
35V
70V
140V
210V
280V
420V
560V
Maximum DC
Blocking
Voltage
1.0 Amp Glass
Passivated High
Efficient Rectifiers
50 to 800 Volts
DO-41
MCC
Part Number
EGP10A
EGP10B
EGP10D
EGP10F
EGP10G
EGP10J
EGP10K
D
50V
100V
200V
300V
400V
600V
800V
O
A
Cathode
Mark
B
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous Forward
Voltage
EGP10A-10D
EGP10F-10G
EGP10J -10K
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Maximum Reverse
Recovery Time
EGP10A-10G
EGP10J-10K
Typical Junction
Capacitance
EGP10A-10D
EGP10F-10K
I
F(AV)
I
FSM
1.0 A
30A
T
A
= 55 C
8.3ms, half
sine
D
C
V
F
0.95V
1.25V
1.70V
5.0uA
100uA
I
F
=1.0A
T
A
=25
O
C
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
I
R
t
rr
50nS
75nS
T
A
= 25
O
C
T
A
= 125
O
C
I
F
=0.5A,
I
R
=1.0A,
I
RR
=0.25A
T
J
=25
O
C
Measured at
1.0MHz,
V
R
=4.0V
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
C
J
22pF
15pF
www.mccsemi.com

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Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE

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