EEWORLDEEWORLDEEWORLD

Part Number

Search

EK13

Description
1.5 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size128KB,4 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

EK13 Online Shopping

Suppliers Part Number Price MOQ In stock  
EK13 - - View Buy Now

EK13 Overview

1.5 A, SILICON, RECTIFIER DIODE

EK13 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSANKEN
Parts packaging codeAXIAL DIODE
package instructionO-XALF-W2
Contacts2
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current1.5 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.2 µs
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SANKEN ELECTRIC CO., LTD.
FMJ-2303
1 適用範囲
Scope
この規格は、FMJ-2303 について適用する。
The present specifications shall apply to Sanken silicon diode, FMJ-2303.
2 概要
Outline
Type
Structure
主 用 途
Applications
ショットキーバリアダイオード
Silicon Schottky Barrier Diode
樹脂封止型
不燃化度:規格
UL94V - 0
相½品
Resin Molded
Flammability : UL94V-0 (Equivalent)
高周波整流
High Frequency Rectification
3 絶対最大定格
Absolute maximum ratings
No.
1
2
3
4
5
6
7
8
Item
記号
Symbol
単½
Unit
30
30
30
150
Rating
Conditions
ピーク非繰返し逆電圧
Transient Peak Reverse Voltage
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
V
V
A
A
A
2
s
ピーク繰返し逆電圧
Peak Reverse Voltage
平均順電流
Average Forward Current
サージ順電流
Peak Surge Forward Current
減定格
6
項参照
Refer to Derating of 6
10msec.正弦半波単発
Half sinewave, one shot
I
2
t
限界値
I t Limiting Value
2
112.5
-40∼+150
-40∼+150
A. C. 1. 0
リードケース間(1 分間)
Junction to case (1minute)
接合部温度
Junction Temperature
保存温度
Storage Temperature
絶縁耐圧
kV
Dielectric Strength
No.1,2,4,5
は一素子½たりの定格を示す。
No.1,2,4&5 show ratings per one chip.
4 電気的特性
(特に指定の無い場合は、25℃とする。)
Electrical characteristics (Ta=25℃, unless otherwise specified)
No.
1
2
3
4
Item
記号
Symbol
単½
Unit
I
F
=15A
V
R
=V
RM
Value
Conditions
順方向降下電圧
Forward Voltage Drop
逆方向漏れ電流
Reverse Leakage Current
V
F
I
R
H½I
R
R
th(j-c)
V
mA
mA
℃/W
0.48 max.
15 max.
500 max.
4.0 max.
高温逆方向漏れ電流
Reverse Leakage Current Under
High Temperature
V
R
=V
RM
, T
j
=150℃
接合部−裏面取付け穴周辺部
Between Junction and case
熱抵抗
Thermal Resistance
No.1,2,3
は一素子½たりの特性を示す。
No.1,2,&3 show characteristics per one chip.
040909
1/4
61426-01

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1757  210  2252  2792  1152  36  5  46  57  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号