Bulletin PD-20717 rev. G 07/04
20BQ030
SCHOTTKY RECTIFIER
2 Amp
I
F(AV)
= 2 Amp
V
R
= 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 2.0 Apk, T
J
=125°C
range
Description/ Features
Units
A
V
A
V
°C
The 20BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
20BQ030
2.0
30
350
0.37
- 55 to 150
Case Styles
20BQ030
SMB
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1
20BQ030
Bulletin PD-20717 rev. G 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
30
V
RWM
Max. Working Peak Reverse Voltage (V)
20BQ030
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
20BQ
2.0
350
80
3.0
1.0
Units
A
Conditions
50% duty cycle @ T
L
= 119 °C, rectangular wave form.
Following any rated
5µs Sine or 3µs Rect. pulse
load condition and
10ms Sine or 6ms Rect. pulse with rated V
RRM
applied
T
J
= 25 °C, I
AS
= 1A, L = 6mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
mJ
A
Electrical Specifications
Parameters
V
FM
V
FM
I
RM
C
T
L
S
Max. Forward Voltage Drop
Max. Forward Voltage Drop
(1)
(1)
20BQ
0.470
0.550
0.370
0.470
0.5
15
Units
V
V
V
V
mA
mA
pF
nH
V/µs
@ 2A
@ 4A
@ 2A
@ 4A
T
J
=
25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Max. Reverse Leakage Current (1)
Max. Junction Capacitance
Typical Series Inductance
200
2.0
10000
V
R
= 5V
DC
, (test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
20BQ
- 55 to 150
- 55 to 150
25
80
Units
°C
°C
°C/W DC operation
°C/W
Conditions
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.10 (0.003) g (oz.)
SMB
IR2E
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
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20BQ030
Bulletin PD-20717 rev. G 07/04
10
100
10
1
0.1
0.01
25°C
0.001
0.0001
T
J
= 150°C
125°C
100°C
75°C
50°C
Ins ntaneous Forward Current - I
F
(A)
ta
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Reverse Current - I
R
(mA)
0
5
10
15
20
25
30
R
everse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1000
Junc tion Capac itanc e - C
T
(pF
)
T
J
= 25°C
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10
0
10
20
30
Forward Voltage Drop - V
FM
(V)
R
evers Voltag e - V
R
(V)
e
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
T
hermal Impedanc e Z
thJL
(°C/ W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
1
Notes
:
S
ingle Pulse
(T
hermal R
esistanc e)
0.1
0.00001
0.0001
0.001
0.01
0.1
t1
t2
1. Duty fac tor D = t 1 / t 2
.
2. Peak T = P
DM
x Z
thJL
+ T
L
.
J
1
10
100
t 1 , Rectangular Pulse Duration (S onds)
ec
Fig. 4 - Maximum Thermal Impedance Z
thJL
Characteristics
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20BQ030
Bulletin PD-20717 rev. G 07/04
150
140
Lead T
emperature - (°C)
130
120
110
100
90
80
70
60
50
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
S
quare wave (D = 0.50)
80% Rated V
R
a pplied
see note (2)
1.2
DC
Average Power Loss - (Watts)
1
0.8
0.6
0.4
0.2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMSLimit
DC
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation
Vs. Average Forward Current
1000
Non-R
epetitive S
urge Current - I
FS
(A)
M
100
At Any Rated Load Condition
And With R
ated V
RRM
Applied
Following S
urge
10
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec )
Fig. 7 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
L
= T
J
- (Pd + Pd
REV
) x R
thJL
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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20BQ030
Bulletin PD-20717 rev. G 07/04
Outline Table
Device Marking: IR2E
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
1
2
4.70 (.185)
4.10 (.161)
1
POLARITY
2 PART NUMBER
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
2.0 TYP.
(.079 TYP.)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR2E
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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