PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES2427P-45
45 W S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for
WLL repeater and base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain,
high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 2.4 to 2.7 GHz. The
device employs 0.9
µ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for
superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• V
DS
= 12.0 V operation
• High output power: P
out
= 45 W TYP.
• High linear gain: G
L
= 11 dB TYP.
• High power added efficiency:
η
add
= 41 % TYP. @ V
DS
= 12.0 V, I
Dset
= 4.0 A (total), f = 2.70 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES2427P-45
Package
T-86
Supplying Form
ESD protective envelope
Remark
To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14810EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
©
2000
NES2427P-45
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T
A
= +25
°
C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
V
GDO
I
D
I
G
P
tot
Note
Ratings
19
−7
−22
24
240
165
175
−65
to +175
Unit
V
V
V
A
mA
W
°C
°C
T
ch
T
stg
Note
T
C
= +25
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Symbol
V
DS
Gcomp
T
ch
I
Dset
R
g
Note
Test Conditions
MIN.
−
−
−
TYP.
−
−
−
4.0
−
MAX.
12.0
3.0
+150
6.0
30
Unit
V
dB
°C
A
Ω
V
DS
= 12.0 V, RF OFF
−
−
Note
R
g
is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
Symbol
I
DSS
V
p
R
th
P
out
I
D
Test Conditions
V
DS
= 2.5 V, V
GS
= 0 V
V
DS
= 2.5 V, I
D
= 110 mA
Channel to Case
f = 2.70 GHz, V
DS
= 12.0 V,
P
in
= 38.5 dBm, R
g
= 30
Ω,
I
Dset
= 4.0 A Total (RF OFF)
Note1
MIN.
−
−4.0
−
45.5
−
−
10
TYP.
24.0
−2.6
0.7
46.5
8
41
11
−38
MAX.
−
−
0.9
−
−
−
−
−
Unit
A
V
°C/W
dBm
A
%
dB
dBc
η
add
G
L
Note2
IM
3
∆
f = 5 MHz,
P
out
= 37 dBm (2 tones total)
−
Notes 1.
I
Dset
= 2.0 A each drain
2.
P
in
= 22 dBm
2
Preliminary Data Sheet P14810EJ1V0DS00
NES2427P-45
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
OUTPUT POWER,
POWER ADDED EFFICIENCY vs.
INPUT POWER [Power Matched]
50
45
40
35
30
25
20
15
V
DS
= 12.0 V
f = 2.70 GHz
I
Dset
= 4.0 A (total)
20
25
30
35
40
60
50
40
30
20
10
0
45
3rd Order Intermodulation Distortion IM
3
(dBc)
3RD ORDER INTERMODULATION
DISTORTION vs. 2 TONES
OUTPUT POWER [Power Matched]
0
V
DS
= 12.0 V
f = 2.70 GHz
–10
I
Dset
= 4.0 A (total)
∆
f = 5 MHz
–20
–30
–40
–50
–60
25
P
out
η
add
Power Added Efficiency
η
add
(%)
Output Power P
out
(dBm)
30
35
40
45
50
Input Power P
in
(dBm)
2 tones Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
Preliminary Data Sheet P14810EJ1V0DS00
3
京公网安备 11010802033920号
EEWORLD
