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NE71383B

Description
L to Ku Band Low Noise N-Channel GaAs MESFET
File Size71KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NE71383B Overview

L to Ku Band Low Noise N-Channel GaAs MESFET

L to Ku Band Low Noise NE71383B
N-Channel GaAs MESFET
FEATURES
• LOW NOISE FIGURE:
NF = 0.6 dB typ at f = 4 GHz
NF = 1.6 dB typ at f = 12 GHz
• HIGH ASSOCIATED GAIN:
14 dB typ at f = 4 GHz
• GATE WIDTH:
W
G
= 280
µm
• GATE LENGTH:
L
G
= 0.3
µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE PERFORMANCE
0
1
2
4
6
8 10
14
20
30
2.5
V
DS
= 3 V
l
D
= 10 mA
NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
24
Noise Figure, NF (dB)
2
20
1.5
G
A
16
1.0
12
0.5
NF
8
4
DESCRIPTION
The NE71383B is a high performance GaAs MESFET provid-
ing a low noise figure and high associated gain through Ku-
band. This device features a recessed 0.3 micron gate and
triple epitaxial technology, and is ideal for low phase noise
oscillator and buffer amplifier applications. The NE71383B is
housed in a hermetically sealed metal/ceramic package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
PARAMETERS AND CONDITIONS
Noise Figure , V
DS
= 3V, I
DS
= 10 mA, f = 4 GHz
V
DS
= 3V, I
DS
= 10 mA, f = 12 GHz
Associated Gain, V
DS
= 3V, I
DS
= 10 mA, f = 4 GHz
V
DS
= 3V, I
DS
= 10 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point,
V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0 V
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current, V
GS
= -5 V
Gate to Source Cutoff Voltage, V
DS
= 3 V, I
DS
= 100
µA
Thermal Resistance (Channel to Case)
UNITS
dB
mS
dB
dB
11.5
8.0
MIN
NE71383B
83B
TYP
0.6
1.6
14.0
9.5
MAX
0.7
1.8
G
A
P
1dB
dBm
mA
mS
µA
V
°C/W
-0.5
20
20
14.5
40
50
1.0
-1.1
10
-3.5
450
120
I
DSS
g
M
I
GSO
V
GS(off)
R
TH
California Eastern Laboratories
Associated Gain, G
A
(dB)

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