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NE6510179A-T1

Description
L BAND, GaAs, N-CHANNEL, RF POWER, HFET
Categorysemiconductor    Discrete semiconductor   
File Size249KB,10 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
Download Datasheet Parametric Compare View All

NE6510179A-T1 Overview

L BAND, GaAs, N-CHANNEL, RF POWER, HFET

NE6510179A-T1 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage6 V
Processing package description79A, 4 PIN
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeMICROWAVE
surface mountYes
Terminal formFLAT
terminal coatingTIN LEAD
Terminal locationQUAD
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureSINGLE
Shell connectionSOURCE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Maximum ambient power consumption15 W
Channel typeN-CHANNEL
field effect transistor technologyHETERO-JUNCTION
operating modeDEPLETION
Transistor typeRF POWER
Maximum leakage current2.8 A
highest frequency bandL BAND
NEC's 3W, L&S-BAND
NE6510179A
MEDIUM POWER GaAs HJ-FET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
0.9 – 0.2
4.2 MAX
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 – 0.2
Source
Source
5.7 MAX
0.6 – 0.15
X
I
Gate
Drain
0.8 – 0.15
4.4 MAX
Gate
1.0 MAX
Drain
1.2
MAX
0.8 MAX
3.6 – 0.2
T
5.7 MAX
9
0.4 – 0.15
• LOW THERMAL RESISTANCE:
5°C/W
0.2 – 0.1
BOTTOM VIEW
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
Note: Unless otherwise specified, tolerance is
±0.2
mm
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain
1
= 25°C)
NE6510179A
79A
UNITS
dBm
dB
%
A
A
V
°C/W
V
12
-2.0
5
50
MIN
31.5
TYP
32.5
10.0
58
0.72
2.4
-0.4
8
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
D
= 14 mA
Channel to Case
I
GD
= 14 mA
MAX
TEST CONDITIONS
f = 1900 MHz, V
DS
= 3.5 V,
Pin = +25 dBm, Rg = 100
I
DSQ
= 200 mA (RF OFF)
2
Functional
Characteristics
η
ADD
I
D
I
DSS
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate to Drain Breakdown Voltage
Electrical DC
Characteristics
V
P
R
TH
BV
GD
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories

NE6510179A-T1 Related Products

NE6510179A-T1 NE6510179A NE6510179
Description L BAND, GaAs, N-CHANNEL, RF POWER, HFET L BAND, GaAs, N-CHANNEL, RF POWER, HFET L BAND, GaAs, N-CHANNEL, RF POWER, HFET
Number of terminals 4 4 4
Minimum breakdown voltage 6 V 6 V 6 V
Processing package description 79A, 4 PIN 79A, 4 PIN 79A, 4 PIN
state TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size MICROWAVE MICROWAVE MICROWAVE
surface mount Yes Yes Yes
Terminal form FLAT FLAT FLAT
terminal coating TIN LEAD NOT SPECIFIED NOT SPECIFIED
Terminal location QUAD QUAD QUAD
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
structure SINGLE SINGLE SINGLE
Shell connection SOURCE SOURCE SOURCE
Number of components 1 1 1
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Maximum ambient power consumption 15 W 15 W 15 W
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology HETERO-JUNCTION HETERO-JUNCTION HETERO-JUNCTION
operating mode DEPLETION DEPLETION DEPLETION
Transistor type RF POWER RF POWER RF POWER
Maximum leakage current 2.8 A 2.8 A 2.8 A
highest frequency band L BAND L BAND L BAND
Lead-free - Yes Yes
EU RoHS regulations - Yes Yes
China RoHS regulations - Yes Yes
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