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NE33284A-T1A

Description
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size45KB,10 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NE33284A-T1A Overview

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
L
1.78 ±0.2
1
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., G
a
= 15.0 dB TYP. at f = 4 GHz
• Gate Width: W
g
= 280
µ
m
1.78 ±0.2
L
U
2
L
3
L
4
ORDERING INFORMATION
SUPPLYING
FORM
STICK
Tape & reel
PART NUMBER
NE33284A-SL
NE33284A-T1
NE33284A-T1A
LEAD LENGTH
L = 1.0
±0.2
mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
165
150
–65 to +150
V
mA
mW
˚C
˚C
1. Source
2. Drain
3. Source
4. Gate
RECOMMENDED OPERATING CONDITION (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
©
0.1
V
1.7 MAX.
L = 1.7 mm MIN.
0.5 TYP.
0.5 TYP.
1995

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Description L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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