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NDL7540PA

Description
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
File Size56KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NDL7540PA Overview

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DATA SHEET
LASER DIODE
NX7460LE
1 480 nm EDFA APPLICATION
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
DESCRIPTION
The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical
Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple
Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable
fundamental mode.
FEATURES
• InGaAsP strained MQW DC-PBH laser diode
• High output power
P
f
= 120 mW MIN. @ I
F
= 550 mA CW
• Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode
• Hermetically sealed 14-pin butterfly package
• Single mode fiber pigtail
• Wide operating temperature range
T
C
= 0 to +65 °C
15.24
2.54
4–
φ
2.67
22.3
PACKAGE DIMENSIONS
in millimeters
#7
Thermistor
TOP VIEW
#1
Case
8.89±0.13 13.3
–0.0
1.25
4.0±0.15
+1.0
+
#14
7
8
1
14
12.7±0.15
6.0
LD
#8
PD
0.5
20.83±0.13
26.04±0.13
Optical Fiber (SMF)
Length: 1 m MIN.
Pin No.
1
2
3
4
5
6
7
PIN CONNECTIONS
Function
Cooler Anode
Thermistor
PD Anode
PD Cathode
Case Ground
NC
NC
Pin No.
Function
8
NC
9
NC
10
LD Anode,
Case Ground
11
LD Cathode
12
NC
13
Case Ground
14
Cooler Cathod
0.30
8.2±0.2
5.6
1.0
29.97±0.25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14127EJ2V0DS00 (2nd edition)
Date Published September 1999 NS CP(K)
Printed in Japan
The mark
shows major revised points.
5.15
Cooler
0.9
©
1999

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