June 1996
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-4.2A, -20V. R
DS(ON)
= 0.06
Ω
@ V
GS
= -4.5V
R
DS(ON)
= 0.08
Ω
@ V
GS
= -2.7V
.
High density cell design for extremely low R
DS(ON).
Enhanced SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
A
= 25°C unless otherwise noted
NDH832P
-20
-8
(Note 1a)
Units
V
V
A
-4.2
-15
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
1.8
1
0.9
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°C/W
°C/W
NDH832P Rev. B2
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55
o
C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125 C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -4.2 A
T
J
= 125 C
V
GS
= -2.7 V, I
D
= -3.7 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
Forward Transconductance
V
DS
= -10 V, I
D
= -4.2 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1000
530
180
pF
pF
pF
-15
-5
9
S
o
o
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-0.4
-0.3
-0.7
-0.5
0.045
0.063
0.064
-1
-0.8
0.06
0.12
0.08
A
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10 V,
I
D
= -4.2 A, V
GS
= -4.5 V
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
Ω
13
53
60
33
18
1.2
6
20
70
80
40
30
ns
ns
ns
ns
nC
nC
nC
NDH832P Rev. B2
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
-1.5
(Note 2)
Units
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.5 A
-0.75
-1.2
P
D
(
t
) =
R
θ
JA
(
t
)
T
J
−
T
A
=
R
θ
JC
+
R
θ
C
(
t
)
A
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.026 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.005 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH832P Rev. B2
Typical Electrical Characteristics
-20
2
V
I
D
, DRAIN-SOURCE CURRENT (A)
GS
= -4.5V
-3.5 -3.0
-2.7
-2.5
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
-15
1.6
V
GS
= -2.5V
-2.7
-10
1.4
-3.0
-3.5
-4.0
-4.5
-2.0
-5
1.2
-1.5
0
0
-1
V
DS
1
-5.0
-2
-3
, DRAIN-SOURCE VOLTAGE (V)
-4
0.8
0
-4
-8
-12
I
D
, DRAIN CURRENT (A)
-16
-20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
2
V
G S
= -4.5V
1.4
R
DS(ON)
, NORMALIZED
V
GS
= -4.5V
R
DS(on)
, NORMALIZED
1.2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
D
= -4.2A
T J = 125°C
1.5
1
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
-4
I
D
-8
-12
, DRAIN CURRENT (A)
-16
-20
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
-20
1.2
125°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= -10V
-16
I
D
, DRAIN CURRENT (A)
T = -55°C
J
25°C
1.1
V
DS
= V
GS
I
D
= -250µA
1
-12
0.9
-8
0.8
-4
0.7
0
0
-0.5
-1
-1.5
-2
-2.5
-3
V
GS
, GATE TO SOURCE VOLTAGE (V)
-3.5
-4
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDH832P Rev. B2
Typical Electrical Characteristics
1.1
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= -250µA
1.08
-I , REVERSE DRAIN CURRENT (A)
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
20
10
V
GS
= 0V
2
1
BV
DSS
, NORMALIZED
T = 125°C
J
0.1
25°C
-55°C
0.01
0.001
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
S
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
2500
2000
5
I
D
= -4.2A
C iss
-V
GS
, GATE-SOURCE VOLTAGE (V)
4
V
DS
= -5.0V
-10V
-15V
1000
CAPACITANCE (pF)
C oss
500
3
2
300
200
f = 1 MHz
V
GS
= 0 V
C rss
1
100
0.1
0.2
0.5
1
2
5
10
20
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
20
, TRANSCONDUCTANCE (SIEMENS)
V
DS
= -10V
TJ = -55°C
15
25°C
125°C
10
5
g
FS
0
0
-4
I
D
-8
-12
-16
-20
, DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDH832P Rev. B2
Analog electronics
京公网安备 11010802033920号
EEWORLD
