EEWORLDEEWORLDEEWORLD

Part Number

Search

PTFB092707FHV1R250XTMA1

Description
RF MOSFET Transistors RFP-LDMOS 9
Categorysemiconductor    Discrete semiconductor   
File Size425KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

PTFB092707FHV1R250XTMA1 Online Shopping

Suppliers Part Number Price MOQ In stock  
PTFB092707FHV1R250XTMA1 - - View Buy Now

PTFB092707FHV1R250XTMA1 Overview

RF MOSFET Transistors RFP-LDMOS 9

PTFB092707FHV1R250XTMA1 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerInfineon
TechnologySi
Package / CaseH37288-4
PackagingReel
Factory Pack Quantity250
PTFB092707FH
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 925 – 960 MHz
Description
The PTFB092707FH is a 270-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 925 to
960 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB092707FH
Package H-37288L-4/2
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2150 mA, ƒ = 925 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
50
40
30
20
10
0
Features
Broadband internal input and output matching
Typical pulsed CW performance (10 µs pulse
width10%, duty cycle, class AB), 960 MHz, 28 V
- Output power at P
1dB
= 250 W
- Efficiency = 52%
- Gain = 18.5 dB
Drain Efficiency (%)
Typical single-carrier WCDMA performance,
960 MHz, 28 V, 7.5 dB PAR @ 0.01% CCDF,
- Output power = 63 W
- Efficiency = 33%
- Gain = 19.5 dB
- ACPR = –35 dBc @ 3.84 MHz
Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Gain
Gain (dB)
19
18
17
16
29
33
37
41
45
49
Efficiency
b092707fh-gr1a
53
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2150 mA, P
OUT
= 60 W avg, ƒ = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average
@ 0.01% CCDF, 10 MHz spacing
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18
28
Typ
19
29
–34
Max
–33
Unit
dB
%
dBc
h
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-10

PTFB092707FHV1R250XTMA1 Related Products

PTFB092707FHV1R250XTMA1 PTFB092707FHV1XWSA1
Description RF MOSFET Transistors RFP-LDMOS 9
Product Category RF MOSFET Transistors RF MOSFET Transistors
Manufacturer Infineon Infineon
Technology Si Si
Package / Case H37288-4 H37288-4
Packaging Reel Tray
Factory Pack Quantity 250 35

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2713  1239  87  2615  954  55  25  2  53  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号