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PHB152NQ03LT

Description
TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size93KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PHB152NQ03LT Overview

TrenchMOS logic level FET

PHB152NQ03LT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
PHP/PHB152NQ03LT
TrenchMOS™ logic level FET
Rev. 01 — 20 February 2002
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
PHP152NQ03LT in SOT78 (TO-220AB)
PHB152NQ03LT in SOT404 (D
2
-PAK).
2. Features
s
Low gate charge
s
Low on-state resistance.
3. Applications
s
Optimized for DC to DC convertors.
4. Pinning information
Table 1:
1
2
3
mb
Pinning - SOT78, SOT404 simplified outline and symbol
Simplified outline
[1]
mb
mb
Pin Description
gate (g)
drain (d)
source (s)
mounting base,
connected to drain (d)
Symbol
d
g
s
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
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