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NAND256R4A2BZB1F

Description
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage   
File Size398KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND256R4A2BZB1F Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

NAND256R4A2BZB1F Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3 V
maximum access time35 ns
Processing package description12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
surface mountYes
Terminal formGULL WING
Terminal spacing0.5000 mm
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelCOMMERCIAL
memory width16
organize32M X 16
storage density5.37E8 deg
operating modeASYNCHRONOUS
Number of digits3.36E7 words
Number of digits32M
Memory IC typeFLASH 3V PROM
serial parallelPARALLEL
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
WSOP48 12 x 17 x 0.65mm
FBGA
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
HARDWARE DATA PROTECTION
– Program/Erase locked during Power
transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
July 2004
1/56
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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