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HZ9B3

Description
8.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size34KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZ9B3 Overview

8.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

HZ9B3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance20 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage8.9 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2.25%
Working test current5 mA
HZ Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
ADE-208-117B(Z)
Rev. 2
Nov. 1999
Features
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
Ordering Information
Type No.
HZ Series
Mark
Type No.
Package Code
DO-35
Outline
1
7
B2
2
Type No.
Cathode band
1. Cathode
2. Anode

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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