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IDT71V67803S133BGGI

Description
256K X 36 CACHE SRAM, 4.2 ns, PQFP100
Categorystorage   
File Size515KB,23 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric View All

IDT71V67803S133BGGI Overview

256K X 36 CACHE SRAM, 4.2 ns, PQFP100

IDT71V67803S133BGGI Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals100
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage3.3 V
Minimum supply/operating voltage3.14 V
Maximum supply/operating voltage3.46 V
Processing package description14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
each_compliYes
EU RoHS regulationsYes
stateActive
ccess_time_max4.2 ns
jesd_30_codeR-PQFP-G100
jesd_609_codee3
storage density9.44E6 bi
Memory IC typeCACHE SRAM
memory width36
moisture_sensitivity_level3
Number of digits262144 words
Number of digits256K
operating modeSYNCHRONOUS
organize256KX36
Packaging MaterialsPLASTIC/EPOXY
ckage_codeLQFP
packaging shapeRECTANGULAR
Package SizeFLATPACK, LOW PROFILE
serial parallelPARALLEL
eak_reflow_temperature__cel_260
qualification_statusCOMMERCIAL
seated_height_max1.6 mm
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal spacing0.6500 mm
Terminal locationQUAD
ime_peak_reflow_temperature_max__s_30
length20 mm
width14 mm
dditional_featurePIPELINED ARCHITECTURE
256K X 36, 512K X 18
3.3V Synchronous SRAMs
3.3V I/O, Burst Counter
Pipelined Outputs, Single Cycle Deselect
x
x
IDT71V67603
IDT71V67803
Features
256K x 36, 512K x 18 memory configurations
Supports high system speed:
– 166MHz 3.5ns clock access time
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW byte
GW),
GW
write enable (BWE and byte writes (BW
BWE),
BWx)
BWE
BW
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (V
DDQ
)
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
x
x
x
x
x
x
Description
The IDT71V67603/7803 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write,
data, address and control registers. Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67603/7803 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the
LBO
input pin.
The IDT71V67603/7803 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-
pin thin plastic quad flatpack (TQFP), a 119 ball grid array (BGA) and a 165
fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
18
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
5310 tbl 01
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V67802.
SEPTEMBER 2004
1
©2004 Integrated Device Technology, Inc.
DSC-5310/06
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