Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency
For infrared sensor
■
Features
•
Low gate-source cutoff current I
GSS
•
Small capacitance of short-circuit forward transfer capacitance
(common source) C
iss
, short-circuit output capacitance (common
source) C
oss
, reverse transfer capacitance (common source) C
rss
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
5°
0.15 min.
0.23
+0.05
–0.02
1
2
0 to 0.01
Parameter
Gate-drain voltage (Source open)
Gate-source voltage (Drain open)
Gate current
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
GDO
V
GSO
I
G
I
D
P
D
T
ch
T
stg
Rating
−40
−40
10
1
100
125
−55
to
+125
Unit
V
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
SSSMini3-F1 Package
Marking Symbol: EB
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Forward transfer admittance
Gate-source cutoff voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Symbol
V
GDS
I
DSS
I
GSS
Y
fs
V
GSC
C
iss
C
oss
C
rss
Conditions
I
G
= −10 µA,
V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
= −20
V, V
DS
=
0
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, I
D
=
1
µA
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
0.05
−1.3
1.0
0.4
0.4
−3.0
Min
−40
30
200
−
0.5
Typ
Max
Unit
V
µA
nA
mS
V
pF
pF
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
■
Absolute Maximum Ratings
T
a
=
25°C
0.52
±0.03
5°
0.15 min.
0.80
±0.05
1.20
±0.05
Publication date: July 2003
SJF00036AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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