datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > storage> storage> N28F512-120
PDF
Preview

N28F512-120

Description
512K(64Kx8)CMOS FLASH MEMORY
Categorystorage    storage   
File Size2MB，30 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

N28F512-120 Overview

512K(64Kx8)CMOS FLASH MEMORY

N28F512-120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time120 ns
Other features100000 ERASE/PROGRAM CYCLES
command user interfaceYES
Data pollingNO
Durability10000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density524288 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width11.43 mm

Preview

Download Datasheet

N28F512-120 Related Products

N28F512-120 28F512 TP28F512-120 TN28F512-120 P28F512-120 P28F512-150 N28F512-150
Description 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible
Maker Intel - Intel Intel Intel Intel Intel
Parts packaging code QFJ - DIP QFJ DIP DIP QFJ
package instruction QCCJ, LDCC32,.5X.6 - DIP, DIP32,.6 0.450 X 0.550 INCH, PLASTIC, LCC-32 DIP, DIP32,.6 DIP, DIP32,.6 QCCJ, LDCC32,.5X.6
Contacts 32 - 32 32 32 32 32
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 120 ns - 120 ns 120 ns 120 ns 150 ns 150 ns
Other features 100000 ERASE/PROGRAM CYCLES - 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES
command user interface YES - YES YES YES YES YES
Data polling NO - NO NO NO NO NO
Durability 10000 Write/Erase Cycles - 1000 Write/Erase Cycles 1000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles
JESD-30 code R-PQCC-J32 - R-PDIP-T32 R-PQCC-J32 R-PDIP-T32 R-PDIP-T32 R-PQCC-J32
JESD-609 code e0 - e0 e0 e0 e0 e0
length 13.97 mm - 41.91 mm 13.97 mm 41.91 mm 41.91 mm 13.97 mm
memory density 524288 bi - 524288 bi 524288 bi 524288 bi 524288 bi 524288 bi
Memory IC Type FLASH - FLASH FLASH FLASH FLASH FLASH
memory width 8 - 8 8 8 8 8
Number of functions 1 - 1 1 1 1 1
Number of terminals 32 - 32 32 32 32 32
word count 65536 words - 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 - 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C - 85 °C 85 °C 70 °C 70 °C 70 °C
organize 64KX8 - 64KX8 64KX8 64KX8 64KX8 64KX8
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QCCJ - DIP QCCJ DIP DIP QCCJ
Encapsulate equivalent code LDCC32,.5X.6 - DIP32,.6 LDCC32,.5X.6 DIP32,.6 DIP32,.6 LDCC32,.5X.6
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER - IN-LINE CHIP CARRIER IN-LINE IN-LINE CHIP CARRIER
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V - 5 V 5 V 5 V 5 V 5 V
Programming voltage 12 V - 12 V 12 V 12 V 12 V 12 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 3.55 mm - 4.83 mm 3.55 mm 4.83 mm 4.83 mm 3.55 mm
Maximum standby current 0.0001 A - 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.03 mA - 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V
surface mount YES - NO YES NO NO YES
technology CMOS - CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL - INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form J BEND - THROUGH-HOLE J BEND THROUGH-HOLE THROUGH-HOLE J BEND
Terminal pitch 1.27 mm - 2.54 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
Terminal location QUAD - DUAL QUAD DUAL DUAL QUAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
switch bit NO - NO NO NO NO NO
type NOR TYPE - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 11.43 mm - 15.24 mm 11.43 mm 15.24 mm 15.24 mm 11.43 mm

Recommended Resources

Forward control circuit with overload protection

STR5312 series internal circuit diagram

Low cost high power factor electronic ballast circuit diagram

Push the high current NOT gate connected to the power load

Ratio detection circuit

845ddr computer motherboard circuit diagram_11

Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components

  1. XC6117B032
  2. MS27473T18B11PD
  3. CMF5566K500BHWF
  4. 5L104
  5. BU-61745F3-140L
  6. 800-034-CBK6NF5-3PX-72
  7. LM2931SX-5.0
  8. 2010W2J0273TC
  9. P6SMB100
  10. P6SMBJ90CA_R1_10001
  11. UM810QS
  12. 201007F1130T4E

Popular Articles

  1. lpc1778 commonly used io port setting functions
  2. Blaize and LeiShen Intelligent Technology have reached a strategic cooperation agreement to integrate LiDAR and AI functions
  3. WaveSense changes its name to GPR and releases next-generation radar Aegis
  4. Automatic identification of vehicle violations! Alipay releases new patent: Capture violations through driving recorders
  5. How to use a multimeter to detect whether a motor is burned out, you only need to master this!
  6. Several measures to foster the development of the integrated circuit industry in Pingtan Comprehensive Experimental Zone were issued
  7. Liexin Semiconductor Launches the World's Smallest 4G/5G MMMB PA at 2.5mmX3.5mm
  8. CIS market may reach US$21.9 billion in 2022, Samsung further narrows the gap with Sony
  9. Lenovo: Low-temperature solder paste technology is the general trend, and the technology is open to the public for free!
  10. Infineon Technologies AIROC™ CYW20829 Bluetooth Low Energy System-on-Chip Supports Latest Bluetooth 5.4 Specification

Technical ResourceMore

  1. USB protocol analysis software, USBlyzer 1.4
  2. Working principle of argon arc welding machine
  3. The current status and prospects of the development of foldable reflector antennas
  4. A Brief Discussion on Optimization Management of WCDMA Wireless Network
  5. Error Control Technology for Satellite ATM Broadband Network
  6. UC1842A,UC1843A,UC1844A,UC1845
  7. VMX300-E Enterprise Video Management System Product Specifications
  8. Transmission Basics
  9. Principle and application examples of DHT11 digital humidity and temperature sensor
  10. External interrupt application design example

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 839  493  2885  1387  540  17  10  59  28  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号