HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFN 80N50
IXFN 75N50
D
G
S
I
D25
80 A
75 A
R
DS(on)
50
m
Ω
55
m
Ω
500 V
500 V
S
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
75N50
80N50
75N50
80N50
Maximum Ratings
500
500
±20
±30
75
80
300
320
80
V
V
V
V
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
64
6
5
700
-55 ... +150
150
-55 ... +150
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
•
International standard packages
•
miniBLOC, with Aluminium nitride
isolation
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
•
Fast intrinsic Rectifier
Applications
•
DC-DC converters
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2
4
±200
T
J
= 25°C
T
J
= 125°C
80N50
75N50
100
2
50
55
V
V
nA
µA
mA
mΩ
mΩ
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Advantages
•
Easy to mount
•
•
Space savings
High power density
© 2002 IXYS All rights reserved
98538C (02/02)
IXFN 75N50
IXFN 80N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
50
70
9890
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1750
460
61
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External),
70
102
27
380
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
80
173
0.18
0.05
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
miniBLOC, SOT-227 B
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 15 V; I
D
= 0.5 • I
D25
, pulse test
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Inches
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
75N50
80N50
75N50
80N50
75
80
300
320
1.3
250
1.2
8
A
A
A
A
V
ns
µC
A
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 30A, -di/dt = 100 A/µs, V
R
= 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFN 75N50
IXFN 80N50
Figure 1. Output Characteristics at 25
O
C
100
T
J
= 25
O
C
Figure 2. Output Characteristics at 125
O
C
100
T
J
= 125
O
C
V
GS
= 9V
8V
7V
6V
5V
80
V
GS
= 9V
8V
7V
6V
80
I
D
- Amperes
I
D
- Amperes
60
5V
60
40
20
40
20
4V
4V
0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Volts
V
DS
- Volts
3.0
2.8
2.6
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
vs. I
D
V
GS
= 10V
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
2.8
V
GS
= 10V
R
DS(ON)
- Normalized
R
DS(ON)
- Normalized
T
J
= 125
O
C
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
60
70
80
T
J
= 25
O
C
2.5
2.2
1.9
I
D
=40A
I
D
= 80A
1.6
1.3
1.0
25
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Figure 5. Drain Current vs. Case Temperature
100
80
Figure 6. Admittance Curves
50
40
I
D
- Amperes
60
40
20
0
I
D
- Amperes
30
T
J
= 125
o
C
20
T
J
= 25
o
C
10
0
4.0
-50
-25
0
25
50
75
100 125 150
4.5
5.0
5.5
6.0
6.5
7.0
7.5
T
C
- Degrees C
V
GS
- Volts
© 2002 IXYS All rights reserved
IXFN 75N50
IXFN 80N50
Figure 7. Gate Charge
10
8
V
DS
= 250 V
I
D
= 40 A
I
G
= 10 mA
Figure 8. Capacitance Curves
30000
10000
Ciss
6
4
2
0
0
50
100 150 200 250 300 350 400
Capacitance - pF
f = 100kHz
Coss
V
GS
- Volts
1000
Crss
100
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
100
V
GS
= 0V
80
I
D
- Amperes
T
J
= 125
O
C
60
40
T
J
= 25
O
C
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Volts
Figure 10. Transient Thermal Resistance
1.000
R(th)
JC
- K/W
0.100
Single Pulse
0.010
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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