K4T1G044QM datasheet, PDF - EEWORLD Datasheet

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K4T1G044QM: Description1Gb M-die DDR2 SDRAM Specification; File Size460KB，29 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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1Gb M-die DDR2 SDRAM Specification

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1Gb M-die DDR2 SDRAM

DDR2 SDRAM

1Gb M-die DDR2 SDRAM Specification

Version 1.1

January 2005

Page 1 of 29

Rev.1.1 Jan. 2005

K4T1G044QM Related Products

	K4T1G044QM	K4T1G044QM-ZCCC	K4T1G084QM-ZCCC	K4T1G044QM-ZCD5	K4T1G164QM-ZCCC	K4T1G084QM-ZCD5	K4T1G164QM-ZCD5
Description	1Gb M-die DDR2 SDRAM Specification	1Gb M-die DDR2 SDRAM Specification	1Gb M-die DDR2 SDRAM Specification	1Gb M-die DDR2 SDRAM Specification	1Gb M-die DDR2 SDRAM Specification	DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA68, ROHS COMPLIANT, FBGA-68	1Gb M-die DDR2 SDRAM Specification
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free	-	-
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	-	-
Maker	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-	-
package instruction	-	BGA, BGA68,9X19,32	BGA, BGA68,9X19,32	BGA, BGA68,9X19,32	BGA, BGA92,9X21,32	-	-
Reach Compliance Code	-	compliant	compliant	compli	compliant	-	-
access mode	-	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-	-
Maximum access time	-	0.6 ns	0.6 ns	0.5 ns	0.6 ns	-	-
Other features	-	AUTO REFRESH	AUTO/SELF REFRESH	AUTO REFRESH	AUTO/SELF REFRESH	-	-
Maximum clock frequency (fCLK)	-	200 MHz	200 MHz	267 MHz	200 MHz	-	-
I/O type	-	COMMON	COMMON	COMMON	COMMON	-	-
interleaved burst length	-	4,8	4,8	4,8	4,8	-	-
JESD-30 code	-	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68	R-PBGA-B92	-	-
length	-	21.7 mm	21.7 mm	21.7 mm	21.7 mm	-	-
memory density	-	1073741824 bit	1073741824 bit	1073741824 bi	1073741824 bit	-	-
Memory IC Type	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-	-
memory width	-	4	8	4	16	-	-
Humidity sensitivity level	-	3	3	3	3	-	-
Number of functions	-	1	1	1	1	-	-
Number of ports	-	1	1	1	1	-	-
Number of terminals	-	68	68	68	92	-	-
word count	-	268435456 words	134217728 words	268435456 words	67108864 words	-	-
character code	-	256000000	128000000	256000000	64000000	-	-
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-
Maximum operating temperature	-	85 °C	85 °C	85 °C	85 °C	-	-
organize	-	256MX4	128MX8	256MX4	64MX16	-	-
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	-	-
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
encapsulated code	-	BGA	BGA	BGA	BGA	-	-
Encapsulate equivalent code	-	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32	BGA92,9X21,32	-	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	-	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	-	-
Peak Reflow Temperature (Celsius)	-	260	260	260	260	-	-
power supply	-	1.8 V	1.8 V	1.8 V	1.8 V	-	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
refresh cycle	-	8192	8192	8192	8192	-	-
Maximum seat height	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-	-
Continuous burst length	-	4,8	4,8	4,8	4,8	-	-
Maximum supply voltage (Vsup)	-	1.9 V	1.9 V	1.9 V	1.9 V	-	-
Minimum supply voltage (Vsup)	-	1.7 V	1.7 V	1.7 V	1.7 V	-	-
Nominal supply voltage (Vsup)	-	1.8 V	1.8 V	1.8 V	1.8 V	-	-
surface mount	-	YES	YES	YES	YES	-	-
technology	-	CMOS	CMOS	CMOS	CMOS	-	-
Temperature level	-	OTHER	OTHER	OTHER	OTHER	-	-
Terminal form	-	BALL	BALL	BALL	BALL	-	-
Terminal pitch	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	-
Terminal location	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
width	-	11 mm	11 mm	11 mm	11 mm	-	-

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