DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BSV52
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 14
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 12 V).
APPLICATIONS
•
High speed saturated switching applications, especially
in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
1
handbook, halfpage
BSV52
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BSV52
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
BSV52
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
Fig.1 Simplified outline (SOT23) and symbol.
MARKING CODE
(1)
B2*
Top view
1
2
MAM255
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
20
12
5
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Jan 14
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0; V
EB
= 4 V
V
CE
= 1 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 300
µA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
25
40
25
−
−
−
700
−
−
−
400
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
500
−
−
−
−
−
−
−
MIN.
−
−
−
TYP.
−
−
−
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
BSV52
UNIT
K/W
MAX. UNIT
400
30
100
nA
µA
nA
120
−
300
250
400
850
1. 2
4
4.5
−
mV
mV
mV
mV
V
pF
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
2004 Jan 14
3
NXP Semiconductors
Product data sheet
NPN switching transistor
BSV52
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 0.5 V to 4.2 V; T = 500
µs;
t
p
=
10
µs;
t
r
= t
s
≤
3 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Jan 14
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BSV52
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 14
5
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