2N2219AL
Silicon NPN Transistor
Data Sheet
Description
S
EMICOA Corporation
offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N2219ALJ)
•
JANTX level (2N2219ALJX)
•
JANTXV level (2N2219ALJV)
•
JANS level (2N2219ALJS)
•
JANSR level (2N2219ALJSR)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/251
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
•
Qualification Levels: JAN, JANTX,
JANTXV
,
JANS
and JANSR
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
50
75
6
800
0.8
4.6
3.0
17.0
-55 to +200
-55 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
W
mW/°C
°C
°C
Copyright 20
10
Rev. K
S
EMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2219AL
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1.0 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
CES
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 75 Volts
V
CB
= 60 Volts
V
CB
= 60 Volts, T
A
= 150
O
C
V
CE
= 50 Volts
V
EB
= 6 Volts
V
EB
= 4 Volts
Min
30
75
100
100
30
35
0.6
Typ
Min
50
10
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
nA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Max
325
300
Units
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
1.2
2.0
0.3
1.0
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
Test Conditions
V
CE
= 20 Volts, I
C
= 20 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
2.5
75
Typ
Max
12
Units
8
25
pF
pF
t
ON
t
OFF
35
300
ns
ns
Copyright 20
10
Rev. K
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
Embedded System
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