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+3.3V, 2.5Gbps Low-Power
Transimpedance Amplifier
MAX3271
ABSOLUTE MAXIMUM RATINGS
Power-Supply Voltage (V
CC
) ................................-0.5V to +6.0V
Input Current (IN) ..................................................-4mA to +4mA
FILTER Current ................................…………..-12mA to +12mA
Voltage at OUT+, OUT- ..................(V
CC
- 1.5V) to (V
CC
+ 0.5V)
Operating Junction
Temperature Range (T
J
) ............……………-55°C to +150°C
Storage Ambient Temperature Range (T
stg
) ....-55°C to +150°C
Die Attach Temperature ..................................................+400°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +3.0V to +3.6V, T
A
= -40°C to +85°C. Typical values are at V
CC
= +3.3V, source capacitance = 0.85pF, T
A
= +25°C, unless
otherwise noted.) (Notes 1, 2)
PARAMETER
Input Bias Voltage
Power-Supply Current
Transimpedance
Small-Signal Bandwidth
Output Impedance
Maximum Differential Output Swing
Filter Resistor
AC Input Overload
DC Input Overload
Input-Referred Noise
Input-Referred Noise Density
Low-Frequency Cutoff
Transimpedance Linear Range
Deterministic Jitter
Power-Supply Noise Rejection
DJ
PSNR
I
N
(Note 3)
(Note 3)
(Note 3)
(Note 4)
-3dB, input
≤
20µA DC
0.95
≤
linearity
≤
1.05 (Note 3)
(Notes 3, 5)
10µAp-p input
20µAp-p
≤
input
≤
2mAp-p
40
18
12
36
40
30
psp-p
dB
2.0
1.0
495
11
50
655
BW
I
CC
40µAp-p input, differential out
(Note 3)
Single-ended
Input = 1mAp-p
2.1
1.5
42
185
SYMBOL
CONDITIONS
MIN
0.66
TYP
0.83
25
2.8
2
50
300
750
58
430
MAX
1.1
35
3.4
UNITS
V
mA
kΩ
GHz
Ω
mVp-p
Ω
mAp-p
mA
nA
RMS
pA/√Hz
kHz
µAp-p
∆V
CC
= 100mVp-p, f < 2MHz (Note 6)
Note 1:
Production test at room ambient temperature only. Die parameters are guaranteed by design and characterization at -40°C
and +85°C.
Note 2:
Source capacitance represents the total capacitance at the IN pad during characterization of the noise and bandwidth
parameters.
Note 3:
Guaranteed by design and characterization.
Note 4:
Input-referred noise density is I
N
/√BW. No external filters are used for the noise measurements.
Note 5:
Deterministic jitter is measured with a K28.5 pattern (0011 1110 1011 0000 0101).
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