MV1662 datasheet, PDF - EEWORLD Datasheet

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MV1662: Description250 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7; Categorysemiconductor Discrete semiconductor; File Size31KB，1 Pages; ManufacturerKnox; Websitehttp://www.knoxsemiconductor.com/

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MV1662 Overview

250 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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ABRUPT VARACTOR DIODES

MV1652 - MV1666

PART

NUMBER

MV1652

MV1654

MV1656

MV1658

MV1660

MV1662

MV1664

MV1666

DIODE CAPACITANCE

Vr = 4 Vdc, f = 1 MHz

(pF)

MIN

NOM

MAX

108

120

135

132

150

165

162

180

198

180

200

220

198

220

242

225

250

275

243

270

300

297

330

363

Q, QUALITY FACTOR

CAPACITANCE RATIO

MIN REVERSE

Vr = 4 Vdc

TYPICAL

VOLTAGE

f = 20 MHz

C•2V / C•20V

C•2V / C•15V

Ir = 10 µA

MIN

Vdc

250

2.6

250

2.6

200

2.6

200

2.6

150

2.6

150

2.3

100

2.3

100

2.3

Package Style

DC Power Dissipation

Max Reverse Current (I

)

Max Reverse Current (I

)

Operating Temperature (Topr)

Storage Temperature (Tstg)

Junction Temperature

@ T

= 25°C

@ 15 Vdc

@ 10 Vdc

DO-7

475 mW

0.1 µA (MV1652 - MV1660)

0.1 µA (MV1662 - MV1666)

-65 to + 150° C

-65 to + 200° C

175° C

P.O. BOX 609

•

ROCKPORT, MAINE 04856

•

207-236-6076

•

FAX 207-236-9558

MV1662 Related Products

	MV1662	MV1664	MV1666	MV1660	MV1658	MV1656
Description	250 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	270 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF-UHF BAND, 330 pF, 15 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14	220 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF-UHF BAND, 200 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE	180 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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