CSPESD301/302/303
1,2 and 3-Channel ESD Arrays in CSP
Features
•
•
•
•
•
•
1, 2 or 3 channels of ESD protection
±15kV ESD protection (IEC 61000-4-2, contact
discharge)
±30kV ESD protection (HBM)
Supports both AC and DC signal applications
Low leakage current (<100nA)
Chip Scale Package features extremely low lead
inductance for optimum ESD and filter perfor-
mance
4 bump, 1.06 x 0.93mm footprint Chip Scale Pack-
age (CSP)
Lead-free version available
Product Description
The CSPESD301/302/303 is a family of 1, 2, and 3-
channel ESD protection arrays, which integrate two,
three and four identical avalanche-style diodes. It is
intended that one of these diodes is connected to GND
and the other diodes provide ESD protection for up to 3
lines depending upon the configuration utilized. The
back-to-back diode connections provide ESD protec-
tion for nodes that have AC signals up to 5.9V peak.
These devices provide a very high level of protection
for sensitive electronic components that may be sub-
jected to electrostatic discharge (ESD). The diodes
are designed and characterized to safely dissipate
ESD strikes of ±15kV, well beyond the maximum
requirements of the IEC 61000-4-2 international stan-
dard. Using the MIL-STD-883 (Method 3015) specifica-
tion for Human Body Model (HBM) ESD, these devices
protection against contact discharges at greater than
±30kV. The diodes also provide some EMI filtering,
when used in combination with a PCB trace or series
resistor.
These devices are particularly well suited for portable
electronics (e.g. cellular telephones, PDAs, notebook
computers) because of their small package format and
easy-to-use pin assignments.
The CSPESD301/2/3 is available in a space-saving,
low-profile, chip-scale package with optional lead-free
finishing.
•
•
Applications
•
•
•
•
•
•
•
I/O port protection
EMI filtering for data ports
Cellphones, notebook computers, PDAs
Wireless Handsets
MP3 Players
Digital Still Cameras
Handheld PCs
Electrical Schematics
A2
B1
A2
B1
B2
A1
A2
B1
B2
CSPESD301
CSPESD302
CSPESD303
© 2003 California Micro Devices Corp. All rights reserved.
12/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
1
CSPESD301/302/303
PACKAGE / PINOUT DIAGRAMS
TOP VIEW
(Bumps Down View)
Orientation
Marking
(see note 2)
BOTTOM VIEW
(Bumps Up View)
A1
1
A
B
2
n*
A2
B2
A1
B1
Orientation
Marking
* See ordering information for
appropriate part marking.
CSPESD301/302/303
4-Bump CSP Package
Notes:
1) These drawings are not to scale.
2) Lead-free devices are specified by using a "+" character for the top side orientation mark.
3) All 4 bumps are always present. Unused bumps are electrically unconnected.
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
Ordering Part
Bumps
4
4
4
Package
CSP
CSP
CSP
Number
1
CSPESD301
CSPESD302
CSPESD303
Part Marking
F
G
H
Lead-free Finish
2
Ordering Part
Number
1
CSPESD301G
CSPESD302G
CSPESD303G
Part Marking
F
G
H
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Note 2: Lead-free devices are specified by using a "
+
" character for the top side orientation mark.
© 2003 California Micro Devices Corp. All rights reserved.
2
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
12/10/03
CSPESD301/302/303
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Package Power Rating
RATING
-65 to +150
200
UNITS
°C
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
V
SO
I
LEAK
V
SIG
PARAMETER
Diode Stand-off Voltage
Diode Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Between adjacent bumps
Between diagonal bumps
Dynamic Resistance
Between adjacent bumps
Between diagonal bumps
Capacitance
CONDITIONS
I
DIODE
=
±10µA
V
IN
=3.3V
I
DIODE
= 10mA
I
DIODE
= -10mA
Notes 2, 3 and 4
±30
±15
Notes 2, 3 and 4
19.5
19.9
Notes 2, 3 and 4
0.85
1.10
At 0VDC, 1MHz, 30mVAC
I
I
ESD
MIN
±5.9
TYP
MAX
UNITS
V
100
6.0
-9.2
7.6
-7.6
9.2
-6.0
nA
V
V
kV
kV
V
ESD
V
CL
V
V
Ω
Ω
pF
R
D
C
27
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to
another diode, one at a time.
Note 3: Unused pins are left open.
Note 4: These parameters are guaranteed by design and char-
acterization.
slope = 1
/
R
D
10mA
10µA
I
LEAK
3.3V
V
SO
V
SIG
V
CL
V
Figure 1. Parameter Legend
© 2003 California Micro Devices Corp. All rights reserved.
12/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
3
ARM Technology
京公网安备 11010802033920号
EEWORLD
