MUN2231T1 datasheet, PDF - EEWORLD Datasheet

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MUN2231T1: DescriptionBias Resistor Transistor; CategoryDiscrete semiconductor The transistor; File Size149KB，11 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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MUN2231T1 Overview

Bias Resistor Transistor

MUN2231T1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	8
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.338 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: Class 1

ESD Rating

– Machine Model: Class B

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MUN2211T1

SERIES

NPN SILICON

BIAS RESISTOR

TRANSISTORS

SC–59

CASE 318D, STYLE 1

PIN 2

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

EMITTER

(GROUND)

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Symbol

Value

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Collector Current

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

θJA

θJL

, T

stg

CEO

Symbol

100

8X = Specific Device Code*

M = Date Code

Unit

Vdc

mAdc

Max

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Unit

°C/W

°C

MUN2211T1 Series–1/11

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