MUN2112RT1 datasheet, PDF - EEWORLD Datasheet

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MUN2112RT1: DescriptionBias Resistor Transistor; CategoryDiscrete semiconductor The transistor; File Size240KB，7 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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MUN2112RT1 Overview

Bias Resistor Transistor

MUN2112RT1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	60
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a series

base resistor and a base–emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SC–59 package

which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC–59 package can be soldered using wave or reflow.

The modified gull–winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

PIN3

Collector

(Output)

MUN2111RT1

MUN2112RT1

MUN2113RT1

MUN2114RT1

MUN2115RT1

MUN2116RT1

MUN2130RT1

MUN2131RT1

MUN2132RT1

MUN2133RT1

MUN2134RT1

PNP SILICON

BIAS RESISTOR

TRANSISTOR

PIN2

base

(Input)

PIN2

Emitter

(Ground)

CASE 318–03 , STYLE 1

( SC – 59 )

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Power Dissipation @ T

= 25°C

(1)

Derate above 25°C

Symbol

CBO

CEO

Value

100

200

1.6

Value

625

–65 to +150

260

Unit

Vdc

mAdc

mW/°C

Unit

°C/W

°C

Sec

THERMAL CHARACTERISTICS

Rating

Thermal Resistance — Junction-to-Ambient (surface mounted)

Operating and Storage Temperature Range

Maximum Temperature for Soldering Purposes

Time in Solder Bath

Symbol

, T

stg

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

MUN2111RT1

MUN2112RT1

MUN2113RT1

MUN2114RT1

(2)

MUN2115RT1

MUN2116RT1

(2)

4.7

1.0

MUN2130RT1

(2)

MUN2131RT1

2.2

MUN2132RT1

(2)

4.7

MUN2133RT1

(2)

4.7

MUN2134R T1

(2)

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

8 8

P1–1/7

MUN2112RT1 Related Products

	MUN2112RT1	MUN21xxRT1	MUN3222RT1	MUN2115RT1	MUN2114RT1	MUN2113RT1	MUN2111RT1
Description	Bias Resistor Transistor	Bias Resistor Transistor	Bias Resistor Transistor	Bias Resistor Transistor	Bias Resistor Transistor	Bias Resistor Transistor	Bias Resistor Transistor
Maker	LRC	-	-	LRC	LRC	LRC	LRC
Reach Compliance Code	unknow	-	-	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.1 A	-	-	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	60	-	-	160	80	80	35
Number of components	1	-	-	1	1	1	1
Polarity/channel type	PNP	-	-	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	-	-	0.2 W	0.2 W	0.2 W	0.2 W
surface mount	YES	-	-	YES	YES	YES	YES
Transistor component materials	SILICON	-	-	SILICON	SILICON	SILICON	SILICON

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