DISCRETE SEMICONDUCTORS
SMA ES1 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Jan 19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Ideal for surface mount automotive
applications
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape
•
Marking: cathode, date code,
type code
•
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
SMA ES1 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic. The small rectangular
package has two J bent leads.
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
ES1A
ES1B
ES1C
ES1D
V
R
continuous reverse voltage
ES1A
ES1B
ES1C
ES1D
V
RMS
root mean square voltage
ES1A
ES1B
ES1C
ES1D
I
F(AV)
I
FSM
average forward current
non-repetitive peak forward current
averaged over any 20 ms period;
T
tp
= 120
°C;
see Fig.2
t = 8.3 ms half sine wave;
T
j
= 25
°C
prior to surge;
V
R
= V
RRMmax
See Fig.3
−
−
−
−
−
−
35
70
105
140
1.0
25
V
V
V
V
A
A
−
−
−
−
50
100
150
200
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
50
100
150
200
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
2000 Jan 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 1 A; see Fig.4
V
R
= V
RRMmax
; see Fig.5
V
R
= V
RRMmax
; T
j
= 165
°C;
see
Fig.5
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.9
V
R
= 4 V; f = 1 MHz; see Fig.6
MIN.
−
−
−
−
SMA ES1 series
TYP.
−
−
−
−
MAX.
1.10
5
100
25
V
UNIT
µA
µA
ns
C
d
diode capacitance
−
19
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm.
For more information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
27
100
150
UNIT
K/W
K/W
K/W
2000 Jan 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
SMA ES1 series
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
Device mounted as shown in Fig.8.
Solid line: Al
2
O
3
PCB.
Dotted line: epoxy PCB.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible junction temperature
as a function of reverse voltage.
T
j
= 25
°C.
Fig.4
Forward current as a function of forward
voltage; typical values.
4
Fig.5
Reverse current as a function of reverse
voltage; typical values.
2000 Jan 19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SMA ES1 series
f = 1MHz; T
j
= 25
°C.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
Fig.7
Transient thermal impedance as a function
of pulse width.
Dimensions in mm.
Material: AL
2
O
3
or epoxy-glass.
Fig.8
Printed-circuit board for surface mounting.
2000 Jan 19
5
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