ES1C-T1 datasheet, PDF - EEWORLD Datasheet

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ES1C-T1: Description1 A, 50 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size44KB，3 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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ES1C-T1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1C-T1 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMA, 2 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0200 us
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	1 A

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WTE

POWER SEMICONDUCTORS

ES1A – ES1J

1.0A SURFACE MOUNT SUPER FAST RECTIFIER

Features

!

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

B

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Low Power Loss

A

Super-Fast Recovery Time

F

Plastic Case Material has UL Flammability

Classification Rating 94V-O

C

H

G

E

SMA/DO-214AC

Dim

Min

Max

A

2.50

2.90

B

4.00

4.60

C

1.40

1.60

D

0.152

0.305

E

4.80

5.28

F

2.00

2.44

G

0.051

0.203

H

0.76

1.52

All Dimensions in mm

D

Mechanical Data

!

Case: Low Profile Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

Maximum Ratings and Electrical Characteristics

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@T

L

= 120°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

ES1A

@T

A

=25°C unless otherwise specified

ES1B

ES1C

ES1D

ES1E

ES1G

ES1J

Unit

50

35

100

70

150

105

200

140

1.0

300

210

400

280

600

420

V

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

@I

F

= 1.0A

@T

A

= 25°C

@T

A

= 100°C

I

FSM

V

FM

I

RM

t

rr

C

j

R

JL

T

j,

T

STG

0.95

30

1.25

5.0

500

35

10

35

-65 to +150

1.7

A

V

µA

nS

pF

K/W

°C

Note: 1. Measured with I

F

= 0.5A, I

R

= 1.0A, I

rr

= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm

2

land area.

ES1A – ES1J

1 of

3

ES1C-T1 Related Products

	ES1C-T1	ES1A-T1	ES1B-T1	ES1D-T1	ES1E-T1	ES1G-T1	ES1J-T1
Description	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
Processing package description	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	pair	pair	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single	single	single	single
Diode component materials	silicon	silicon	silicon	silicon	silicon	silicon	silicon
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	0.0200 us	0.0200 us	0.0200 us	0.0200 us	0.0200 us	0.0200 us	0.0200 us
Maximum repetitive peak reverse voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	1 A

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