ESAC33M(C,N,D)
(8A)
FAST RECOVERY DIODE
10.5
Max.
6.0
4.7
(200V / 8A)
Outline drawings, mm
Ø3.2
+0.2
-0.1
4.5
Max.
2.0
3.7
1.2
13.0
0.8
2.54
2.7
Min.
17.0
±0.3
0.4
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
JEDEC
EIAJ
5.08
SC-67
Connection diagram
2
ESAC33M-
C
1
2
ESAC33M-
N
1
2
3
3
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
O
I
FSM
T
j
T
stg
Conditions
ESAC33M-
D
1
3
Rating
-02
200
200
Unit
V
V
A
A
°C
°C
Square wave, duty=1/2, Tc=95°C
Sine wave 10ms
8*
30
-40 to +150
-40 to +150
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=2.0A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.1A
Junction to case
Max.
1.4
500
100
3.5
Unit
V
µA
ns
°C/W
(200V / 8A )
Characteristics
Forward characteristics
10
10
5
3
1.0
ESAC33M(C,N,D)(8A)
Reverse characteristics
I
F
[A]
1
0.5
I
R
[µA]
0.1
0.01
0.005
0.1
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
100
200
300
V
F
[V]
V
R
[V]
Forward power dissipation
12
140
10
8
120
Output current-case temperature
W
F
6
[W]
4
2
T
c
[°C]
100
80
60
0
0
1
2
3
4
5
6
0
2
4
6
8
10
I
o
[A]
I
o
[A]
Junction capacitance characteristics
100
30
50
30
Surge capability
C
j
[pF]
10
10
I
FSM
[A]
5
3
5
3
5
10
30
50
100
1
1
3
5
10
30
V
R
[V]
[time] (at 50Hz)
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