MTP3N60
MTP3N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
MTP3N60
MTP3N60FI
s
s
s
s
s
V
DSS
600 V
600 V
R
DS( on)
< 2.5
Ω
< 2.5
Ω
I
D
3.9 A
2.5 A
TYPICAL R
DS(on)
= 2
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MTP3N60
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
MTP3N60FI
600
600
±
20
3.9
2.4
14
100
0.8
-65 to 150
150
2.5
1.5
14
35
0.28
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10
MTP3N60/FI
THERMAL DATA
TO-220
R
thj-cas e
R
thj- amb
R
t hc- sin k
T
l
Thermal Resistance Junction-case
Max
1.25
62.5
0.5
300
ISOWATT220
3.57
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
I
A R
E
AS
E
AR
I
A R
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
o
Max Value
3.9
300
7.7
2.4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
OFF
Symbol
V
( BR)DSS
I
DS S
I
G SS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
G S
= 0
Min.
600
25
250
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (∗)
Symbol
V
G S(th)
R
DS( on)
I
D( on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
Test Conditions
I
D
= 1 mA
I
D
= 1.5 A
3.9
Min.
2
Typ.
3
2
Max.
4.5
2.5
Unit
V
Ω
A
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D( on)
x R
D S(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 1.5 A
V
G S
= 0
Min.
1.5
Typ.
2.6
560
90
40
800
130
55
Max.
Unit
S
pF
pF
pF
2/10
MTP3N60/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
V
DD
= 225 V I
D
= 2.5 A
V
GS
= 10 V
R
G
= 15
Ω
(see test circuit, figure 3)
V
DD
= 480 V I
D
= 4 A
V
GS
= 10 V
R
G
= 15
Ω
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 4 A
V
GS
= 10 V
Min.
Typ.
45
33
200
Max.
60
42
Unit
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
43
6
21
55
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 480 V I
D
= 4 A
R
G
= 15
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
Typ.
35
40
60
Max.
45
55
75
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
S D
I
SDM
(•)
V
S D
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.9 A
V
GS
= 0
420
3.7
18
I
SD
= 4 A
di/dt = 100 A/µs
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
Test Conditions
Min.
Typ.
Max.
3.9
14
2
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
MTP3N60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
MTP3N60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
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