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IRF6691TRPBF

Description
Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size655KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRF6691TRPBF Overview

Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

IRF6691TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionSMALL OUTLINE, R-PDSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)230 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)32 A
Maximum drain-source on-resistance0.0018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)260 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 97204
PROVISIONAL
l
l
l
l
l
l
l
l
l
RoHs Compliant

Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Typical values (unless otherwise specified)
DirectFET™ Power MOSFET
‚
R
DS(on)
Q
rr
26nC
IRF6691PbF
IRF6691TRPbF
R
DS(on)
V
gs(th)
2.0V
V
DSS
tot
V
GS
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V
Q
g
Q
gd
15nC
Q
gs2
4.4nC
Q
oss
30nC
47nC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MT
DirectFET™ ISOMETRIC
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
10
9
8
7
6
5
4
3
2
1
0
2
Max.
20
±12
32
26
180
260
230
26
VGS, Gate-to-Source Voltage (V)
Units
V
e
Continuous Drain Current, VGS @ 10V
e
Continuous Drain Current, V @ 10V
f
Pulsed Drain Current
g
Single Pulse Avalanche Energy
h
Avalanche Current
Ãg
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
j
A
mJ
A
VDS= 16V
VDS= 10V
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
Typical RDS(on) (mΩ)
ID = 32A
ID= 17A
T J = 125°C
T J = 25°C
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.72mH, R
G
= 25Ω, I
AS
= 26A.
05/18/06
www.vishay.com
1
Document Number: 91332

IRF6691TRPBF Related Products

IRF6691TRPBF IRF6691TR1PBF IRF6691PBF
Description Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2 SMALL OUTLINE, R-PDSO-G2
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 230 mJ 230 mJ 230 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (ID) 32 A 32 A 32 A
Maximum drain-source on-resistance 0.0018 Ω 0.0018 Ω 0.0018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 260 A 260 A 260 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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