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MTP10N06

Description
9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Categorysemiconductor    Discrete semiconductor   
File Size169KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

MTP10N06 Overview

9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

MTP10N06 Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage100 V
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionDRAIN
Number of components1
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current9.2 A
Maximum drain on-resistance0.2700 ohm
Maximum leakage current pulse37 A

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