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KSD5071

Description
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size29KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSD5071 Overview

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

KSD5071 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-3PF
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)8
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
KSD5071
NPN TRIPLE DIFFUSED
PLANAR SILICON TRANSISTOR
TO-3PF
COLOR TV HORIZONTAL OUTPUT
APPLICATION (DAMPER DIODE BUILT IN)
High Collector-Base Voltage (V
CBO
=1500V)
High Switching Speed (t
F
. max=0.4µs)
ABSOLUTE MAXIMUM RATING
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
T
J
T
STG
Rating
1500
800
6
3.5
10
50
150
-55 ~ 150
Unit
V
V
V
A
A
W
°C
°C
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Damper Diode Turn On Voltage
Fall Time
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
V
F
t
F
Test Condition
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
I
C
= 2.5A, I
B
= 0.8A
I
C
= 2.5A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
I
F
= 3.5A
I
C
= 3A, I
B
1 = 0.8A
I
B
2 = - 1.6A, V
CC
= 200V
RL = 66.7Ω
.
Min
40
8
Typ
Max
10
200
8
1.5
3
2
0.4
Unit
µA
mA
V
V
MHz
V
µs
Rev B.
©
1999 Fairchild Semiconductor Corporation

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