If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Ceramic
V
CC
Pin Potential to Ground Pin
Input Voltage (Note 2)
Input Current (Note 2)
Voltage Applied to Any Output
in the Disabled or
Power-Off State
in the HIGH State
−65˚C to +150˚C
−55˚C to +125˚C
−55˚C to +175˚C
−0.5V to +7.0V
−0.5V to +7.0V
−30 mA to +5.0 mA
Current Applied to Output
in LOW State (Max)
DC Latchup Source Current
twice the rated I
OL
(mA)
−500 mA
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Supply Voltage
Military
Minimum Input Edge Rate
Data Input
Enable Input
−55˚C to +125˚C
+4.5V to +5.5V
(∆V/∆t)
50 mV/ns
20 mV/ns
−0.5V to 5.5V
−0.5V to V
CC
DC Electrical Characteristics for ’FCT Family Devices
Symbol
V
IH
V
IL
V
CD
V
OH
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH Current
Input LOW Current
Maximum TRI-STATE Current HIGH or
LOW
Output Short-Circuit Current
Quiescent Power Supply Current
Quiescent Power
Supply Current
Dynamic I
CC
54FCT
54FCT
V
OL
54FCT
54FCT
I
IH
I
IL
I
OZ
I
OS
I
CCQ
∆I
CC
I
CCD
4.3
2.4
0.2
0.55
5
−5
µA
µA
µA
mA
mA
mA
mA/
MHz
Max
Max
Max
Max
Max
Max
Max
V
Min
FCT244
Min
2.0
0.8
−1.2
Max
V
V
V
V
Min
Min
Recognized HIGH Signal
Recognized LOW Signal
I
IN
= −18 mA
I
OH
= −300 µA
I
OH
= −12 mA
I
OL
= 300 µA
I
OL
= 48 mA
V
IN
= V
CC
V
IN
= 0.0V
V
IN
= 0.0V or V
IN
= V
CC
V
OUT
= 0.0V
V
IN
<
0.2V or V
IN
5.3V, V
CC
=
5.5V
V
I
= 3.4V, V
CC
= 5.5V
Outputs Open, V
CC
= 5.5V, V
IN
5.3V or V
IN
<
0.2V, One Bit
Toggling, 50% Duty Cycle, OE =
GND, LE = V
CC
Outputs Open, f
CP
= 10 MHz,
V
CC
= 5.5V, V
IN
5.3V or V
IN
<
0.2V, One Bit Toggling, 50%
Duty Cycle, OE = GND, LE =
V
CC
Units
V
CC
Conditions
±
10
-60
1.5
2.0
0.4
I
CCT
Total Power Supply
Current
6.0
mA
Max
Note 1:
Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions
is not implied.
Note 2:
Either voltage limit or current limit is sufficient to protect inputs.
Note 3:
All outputs loaded; thresholds on input associated with output under test.
Note 4:
Maximum test duration 2.0 ms, one output loaded at a time.
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2
54FCT244
AC Electrical Characteristics for ’FCT Family Devices
Symbol
Parameter
54FCT
T
A
= −55˚C to +125˚C
V
CC
= 4.5V–5.5V
C
L
= 50 pF
Min
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation Delay
Data to Outputs
Output Enable
Time
Output Disable
Time
1.5
1.5
1.5
1.5
1.5
1.5
Max
7.5
7.5
10.5
10.5
8.0
8.0
ns
ns
ns
Units
Fig.
No.
Capacitance
Symbol
C
IN
C
OUT
(Note 5)
Parameter
Input Capacitance
Output Capacitance
Max
10.0
12.0
Units
pF
pF
Conditions
T
A
= 25˚C
V
CC
= 0V
V
CC
= 5.0V
Note 5:
C
OUT
is measured at frequency f = 1 MHz, per MIL-STD-883B, Method 3012.
3
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54FCT244
Physical Dimensions
inches (millimeters) unless otherwise noted
20-Terminal Ceramic Chip Carrier (L)
NS Package Number E20A
20-Lead Ceramic Dual-In-Line (D)
NS Package Number J20A
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4
54FCT244 Octal Buffer/Line Driver with TRI-STATE Outputs
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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systems which, (a) are intended for surgical implant
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whose failure to perform when properly used in
accordance with instructions for use provided in the
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