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BPW96B

Description
Development Boards u0026 Kits - x86
CategoryLED optoelectronic/LED   
File Size111KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Development Boards u0026 Kits - x86

BPW96B Parametric

Parameter NameAttribute value
Product CategoryPhototransistors
ManufacturerVishay
RoHSDetails
ProductPhototransistors
Package / CaseT-1 3/4
Mounting StyleThrough Hole
Peak Wavelength850 nm
Maximum On-State Collector Current50 mA
Collector- Emitter Voltage VCEO Max70 V
Dark Current200 nA
Pd - Power Dissipation150 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Collector-Emitter Saturation Voltage0.3 V
Half Intensity Angle Degrees20 deg
Height8.6 mm
Length5.75 mm
Lens Color/StyleClear
PackagingBulk
Factory Pack Quantity4000
TypeChip
Wavelength850 nm
Width5.75 mm
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94 8391
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW96B
BPW96C
I
ca
(mA)
2.5 to 7.5
4.5 to 15
ϕ
(deg)
± 20
± 20
λ
0.1
(nm)
450 to 1080
450 to 1080
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW96B
BPW96C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
3s
Connected with Cu wire, 0.14
mm
2
t
p
/T
0.5, t
p
10 ms
T
amb
47 °C
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
Document Number: 81532
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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