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BPW-34-B

Description
Zigbee / 802.15.4 Modules XBee ZB S2C TH Wire Antenna
CategoryLED optoelectronic/LED   
File Size248KB,11 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
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BPW-34-B Overview

Zigbee / 802.15.4 Modules XBee ZB S2C TH Wire Antenna

BPW-34-B Parametric

Parameter NameAttribute value
Product CategoryPhotodiodes
ManufacturerOsram Opto Semiconductor
RoHSDetails
ProductPIN Photodiodes
Package / CaseDIL-2
Mounting StyleThrough Hole
Peak Wavelength850 nm
Dark Current2 nA
Vr - Reverse Voltage32 V
Rise Time25 ns
Fall Time25 ns
Half Intensity Angle Degrees60 deg
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
Height2.2 mm
If - Forward Current100 mA
Length4.5 mm
Noise Equivalent Power - NEP13E-14 W/sqrt Hz
PackagingBulk
Pd - Power Dissipation150 mW
Photocurrent14.8 uA
Responsivity0.2 A/W
Factory Pack Quantity250
TypeSilicon PIN Photodiode
Vf - Forward Voltage1.3 V
Width4 mm
2014-07-17
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT
Version 1.2
BPW 34 B, BPW 34 BS
BPW 34 B
BPW 34 BS
Features:
• Especially suitable for applications from 350 nm to
1100 nm
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
Besondere Merkmale:
• Speziell geeignet für Anwendungen im Bereich von
350 nm bis 1100 nm
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
Anwendungen
• Lichtschranken
• Industrieelektronik
• Messen / Steuern / Regeln
Ordering Information
Bestellinformation
Type:
Typ:
Photocurrent
Fotostrom
λ = 400 nm, E
e
= 1 mW/cm , V
R
= 5 V
I
P
[µA]
BPW 34 B
BPW 34 BS
14.8 (≥ 10.8)
14.8 (≥ 10.8)
Q62702P0945
Q65110A2625
2
Ordering Code
Bestellnummer
2014-07-17
1

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