TCMT111. Series
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Single Channel,
Half Pitch Mini-Flat Package
C
4
E
3
FEATURES
• Low profile package (half pitch)
• AC isolation test voltage 3750 V
RMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) selected into groups
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
A
22628-1
2
C
DESCRIPTION
The TCMT111X series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin package.
AGENCY APPROVALS
• UL1577, file no. E76222, double protection
• cUL component acceptance service no. 5A, double
protection
• DIN EN 60747-5-5 (VDE 0884-5)
• FIMKO: FI EN 60950-1:2006
• BSI: BS EN60065:2002
BS EN60950-1:2006
• CQC GB 8898-2011, GB 4943.1-2011 (suitable for
installation altitude below 2000 m)
APPLICATIONS
• Programmable logic controllers
• Modems
• Answering machines
• General applications
ORDERING INFORMATION
T
C
M
T
1
1
1
#
SSOP-4
PART NUMBER
AGENCY
CERTIFIED/PACKAGE
UL, cUL, BSI, VDE
SSOP-4
CTR (%)
5 mA
50 to 600
TCMT1110
10 mA
100 to 200
TCMT1113
100 to 300
TCMT1116
80 to 160
TCMT1117
5 mA
130 to 260
TCMT1118
≥
5 mm
200 to 400
TCMT1119
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
t
P
≤
10 μs
V
R
I
F
I
FSM
P
diss
T
j
6
50
1.5
80
125
V
mA
A
mW
°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Rev. 1.7, 10-Mar-16
Document Number: 81862
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT111. Series
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
T
j
P
tot
T
amb
T
stg
T
sld
VALUE
70
7
50
100
150
125
230
-40 to +110
-40 to +125
260
UNIT
V
V
mA
mA
mW
°C
mW
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Wave soldering three cycles are allowed. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
-
-
-
0.1
100
0.3
0.3
-
-
V
kHz
pF
I
C
= 100 μA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0
V
CEO
V
ECO
I
CEO
70
7
-
-
-
-
-
-
100
V
V
nA
I
F
= 5 mA
V
R
= 0, f = 1 MHz
V
F
C
j
-
-
1.08
8
1.4
-
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
V
CE
= 5 V, I
F
= 5 mA
V
CE
= 5 V, I
F
= 10 mA
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
PART
TCMT1110
TCMT1113
TCMT1114
TCMT1117
TCMT1118
TCMT1119
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
100
160
80
130
200
TYP.
-
-
-
-
-
-
MAX.
600
200
320
160
260
400
UNIT
%
%
%
%
%
%
Rev. 1.7, 10-Mar-16
Document Number: 81862
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT111. Series
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
-
-
-
-
-
-
-
-
TYP.
4
5.5
7
1.5
9.5
8
3
20
MAX.
-
-
-
-
-
-
-
-
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
(see figure 2)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
(see figure 2)
I
F
I
F
0
I
F
+5V
I
C
= 2 mA; adjusted through
input amplitude
0
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
100
Ω
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 3 - Switching Times
I
F
0
I
F
= 10 mA
+5V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 2 - Test Circuit, Saturated Operation
Rev. 1.7, 10-Mar-16
Document Number: 81862
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT111. Series
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
CTI
40 % to 60 % RH, AC test of 1 min
V
ISO
V
IOTM
V
IORM
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= T
SI
R
IO
R
IO
P
SO
I
SI
T
SI
V
IORM
x 1.6 = V
PR
, type and sample test
t
m
= 60 s, partial discharge < 5 pC
V
IORM
x 1.875 = V
PR
, 100 % production
test with t
m
= 1 s, partial discharge < 5 pC
V
PR
V
PR
VALUE
55/110/21
175
3750
6000
707
10
11
10
9
350
200
175
1132
1326
≥
5
≥
5
DTI
≥
0.4
2
V
RMS
V
V
Ω
Ω
mW
mA
°C
V
peak
V
peak
mm
mm
mm
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification (according to IEC 68 part 1)
Comparative tracking index
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Isolation resistance (under fault conditions)
Output safety power
Input safety current
Input safety temperature
Apparent charge test voltage (method A)
Apparent charge test voltage (method B)
Creepage distance
Clearance distance
Insulation thickness
Environment (pollution degree in accordance to DIN VDE 0109)
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Total Power Dissipation (mW)
300
250
200
Phototransistor
150
100
50
0
0
96 11700
100
I
F
- Forward Current (mA)
Coupled device
10
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= -55 °C
IR-diode
1
0.1
40
80
120
0.6
0.8
1.0
1.2
1.4
1.6
T
amb
- Ambient Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Rev. 1.7, 10-Mar-16
Document Number: 81862
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT111. Series
www.vishay.com
Vishay Semiconductors
N
CTR
- Normalized CTR (non-saturated)
55
I
C
- Collector Current (mA)
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
4
I
F
= 1 mA
I
F
= 35 mA
1.2
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
I
F
= 30 mA
I
F
= 25 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
-60 -40 -20
0
20
40
60
80 100 120
5
6
7
8
9
10
V
CE
- Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
10 000
I
F
= 0 mA
1.2
I
CE0
- Leakage Current (nA)
V
CE
= 40 V
100
10
1
0.1
N
CTR
- Normalized CTR (sat)
1000
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 24 V
V
CE
= 12 V
0.01
0.001
-60 -40 -20
0
20
40
60
80 100 120
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
-60 -40 -20
0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
14
12
10
8
6
4
2
0
0
0.1
0.2
0.3
0.4
I
F
= 1 mA
I
F
= 5 mA
V
CEsat
- Collector Emitter Voltage (V)
I
C
- Collector Current (mA)
I
F
= 10 mA
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60 -40 -20
0
20
40
60
80 100 120
I
c
= 1 mA
I
c
= 2 mA
I
F
= 10 mA
I
c
= 5 mA
I
F
= 2 mA
V
CE
- Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
T
amb
- Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
Rev. 1.7, 10-Mar-16
Document Number: 81862
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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