Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output
C
E
FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage 5000 V
RMS
• Current transfer ratio (CTR) selected into
groups
1
A
17918_13
C
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Available in single, dual and quad channel packages
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
C
17203-5
DESCRIPTION
In the K817P part each channel consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin (single) plastic dual inline package.
APPLICATIONS
• Programmable logic controllers
• Modems
• Answering machines
• General applications
AGENCY APPROVALS
• BSI: EN 60065:2002, EN 60950-1:2006
• DIN EN 60747-5-2 (VDE 0884)
• FIMKO
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
ORDERING INFORMATION
DIP
K
8
1
7
P
#
x
PACKAGE
OPTION
PART NUMBER
AGENCY CERTIFIED/
PACKAGE
VDE, BSI, FIMKO,
UL, cUL
DIP-4
CTR (%)
5 mA
10 mA
7.62 mm
5 mA
50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
K817P
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K817P8
K817P9
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Rev. 2.1, 23-May-13
t
p
/T = 0.5, t
p
10 ms
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
70
125
V
V
mA
mA
mW
°C
t
p
10 μs
V
R
I
F
I
FSM
P
diss
T
j
6
60
1.5
70
125
V
mA
A
mW
°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Document Number: 83522
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
TEST CONDITION
t=1s
SYMBOL
V
ISO
P
tot
T
amb
T
stg
2 mm from case, t
10 s
T
sld
VALUE
5000
200
- 40 to + 100
- 55 to + 125
260
UNIT
V
RMS
mW
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices.
80
Abs. Max. Output Power (mW)
Abs. Max. Input Current (mA)
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Ambient Temperature (°C)
Fig. 1 - Absolute Maximum Output Power and Input Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100
f = 1 MHz
V
CEsat
f
c
C
k
110
0.6
0.3
V
kHz
pF
I
C
= 100 μA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0, E = 0
V
CEO
V
ECO
I
CEO
70
7
10
100
V
V
nA
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
V
F
C
j
1.25
50
1.6
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 2.1, 23-May-13
Document Number: 83522
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
TEST CONDITION
V
CE
= 5 V, I
F
= 5 mA
PART
K817P
K817P1
V
CE
= 5 V, I
F
= 10 mA
K817P2
K817P3
K817P4
K817P5
K817P6
V
CE
= 5 V, I
F
= 5 mA
K817P7
K817P8
K817P9
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
40
63
100
160
50
100
80
130
200
TYP.
MAX.
600
80
125
200
320
150
300
160
260
400
UNIT
%
%
%
%
%
%
%
%
%
%
CURRENT TRANSFER RATIO
PARAMETER
I
C
/I
F
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V
Insulation resistance
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
Rated impulse voltage
Max. working voltages
Forward current
Power dissipation
Safety temperature
Creepage distance
Recurring peak voltage
SYMBOL
V
pd
V
pd
R
IO
R
IO
R
IO
V
IOTM
V
IORM
I
SI
P
SO
T
si
MIN.
1.6
1.36
10
12
10
11
10
9
6000
850
130
265
150
7.6
TYP.
MAX.
UNIT
kV
kV
V
peak
V
peak
mA
mW
°C
mm
Note
• According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
300
250
200
Phototransistor
P
SO
(mW)
V
IOTM
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
pd
= 1 s to 10 s
=1s
= 10 s
= 12 s
150
100
50
0
0
25
50
75
100
125
IR-diode
I
SI
(mA)
V
IOWM
V
IORM
0
150
13930
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
T
SI
- Safety Temperature (°C)
Fig. 2 - Derating Diagram
Fig. 3 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
Rev. 2.1, 23-May-13
Document Number: 83522
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
3
3
4.7
0.3
6
5
3
10
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k (see
figure 2)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k (see
figure 2)
I
F
0
I
F
+5V
I
C
= 2 mA; adjusted through
input amplitude
I
F
0
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
100
Ω
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 3 - Switching Times
I
F
0
I
F
= 10 mA
+5V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 2 - Test Circuit, Saturated Operation
Rev. 2.1, 23-May-13
Document Number: 83522
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1.6
30
T
amb
= 0 °C
I
C
- Collector Current (mA)
V
F
- Forward Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
T
amb
= 110 °C
T
amb
= - 55 °C
25
I
F
= 25 mA
20
15
10
5
I
F
= 1 mA
I
F
= 10 mA
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
I
F
= 5 mA
I
F
= 2 mA
0
10
100
22329
1
0
0.1
0.2
0.3
0.4
22326
I
F
- Forward Current (mA)
V
CE
- Collector Emitter Voltage (sat) (V)
Fig. 4 - Forward Voltage vs. Forward Current
Fig. 7 - Collector Current vs. Collector Emitter Voltage (saturated)
25
1.2
N
CTR
- Normalized CTR (sat)
I
C
- Collector Current (mA)
20
15
I
F
= 30 mA
1.0
I
F
= 5 mA
0.8
I
F
= 10 mA
0.6
0.4
0.2
0
I
F
= 1 mA
I
F
= 20 mA
10
5
0
0
2
4
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 0.4 V
Normalized to:
I
F
= 10 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
6
8
10
22327
V
CE
- Collector Emitter Voltage (NS) (V)
T
amb
- Ambient Temperature (°C)
Fig. 8 - Normalized CTR (saturated) vs. Ambient Temperature
Fig. 5 - Collector Current vs. Collector Emitter Voltage
(non-saturated)
I
CE0
- Leakage Current (nA)
1000
N
CTR
- Normalized CTR (NS)
I
F
= 0 mA
1.2
I
F
= 10 mA
1.0
0.8
I
F
= 5 mA
V
CE
= 40 V
10
V
CE
= 12 V
V
CE
= 24 V
0.1
0.6
0.4
I
F
= 1 mA
0.2
0
0.001
- 60 - 40 - 20 0
22328
Normalized to:
I
F
= 10 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20 40 60 80 100 120
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized CTR (non-saturated) vs. Ambient Temperature
Fig. 6 - Leakage Current vs. Ambient Temperature
Rev. 2.1, 23-May-13
Document Number: 83522
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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