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IL352

Description
Transistor Output Optocouplers Phototransistor Out Single CTR u003e100%
CategoryLED optoelectronic/LED    photoelectric   
File Size120KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IL352 Overview

Transistor Output Optocouplers Phototransistor Out Single CTR u003e100%

IL352 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Coll-Emtr Bkdn Voltage-Min30 V
ConfigurationSINGLE
Nominal current transfer ratio100%
Maximum dark power50 nA
Maximum forward current0.06 A
Maximum insulation voltage3000 V
Number of components1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches1
IL352
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
N.C
1
A
2
C
3
N.C
4
i179027
8
B
7
• Good CTR linearly depending on forward
current
• Isolation test voltage: 3000 V
RMS
• High collector emitter voltage, V
CEO
= 30 V
• Low saturation voltage
• Fast switching times
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
C
6
5
E
DESCRIPTION
The IL352 optically coupled isolator that features a high
current transfer ratio, low coupling capacitance and high
isolation voltage. It has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector. The component is housed in a thin
line package.
The coupling device is designed for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled must not
exceed the maximum permissible reference voltages.
AGENCY APPROVALS
• UL1577, file no. E52744 system code S
• DIN EN 60747-5-5 (VDE 0884) available with option 1
ORDER INFORMATION
PART
IL352
REMARKS
CTR > 100 %, SMD-8
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Total power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter voltage
Emitter base voltage
Collector current
Total power dissipation
Derate linearly from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
(2)
TEST CONDITION
SYMBOL
V
R
I
F
P
diss
VALUE
6
60
50
0.66
70
7
50
100
150
2.5
UNIT
V
mA
mW
mW/°C
V
V
mA
mA
mW
mW/°C
t
1 ms
V
CE
V
EBO
I
C
I
C
P
diss
t = 1.0 s
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
V
ISO
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
3000
10
12
10
11
- 40 to + 150
- 40 to + 85
100
260
V
RMS
Ω
Ω
°C
°C
°C
°C
max. 10 s, dip soldering:
distance to seating plane
1.5 mm
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices.
www.vishay.com
370
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83624
Rev. 1.6, 10-Dec-08
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