EEWORLDEEWORLDEEWORLD

Part Number

Search

PS100B-6-CERPING

Description
Photodiodes 100mm sqd. PIN dect Photodiode
CategoryLED optoelectronic/LED   
File Size413KB,2 Pages
ManufacturerFirst Sensor
Download Datasheet Parametric View All

PS100B-6-CERPING Online Shopping

Suppliers Part Number Price MOQ In stock  
PS100B-6-CERPING - - View Buy Now

PS100B-6-CERPING Overview

Photodiodes 100mm sqd. PIN dect Photodiode

PS100B-6-CERPING Parametric

Parameter NameAttribute value
Product CategoryPhotodiodes
ManufacturerFirst Sensor
RoHSDetails
ProductPIN Photodiodes
Mounting StyleSMD/SMT
Peak Wavelength900 nm
Dark Current1 nA
Vr - Reverse Voltage50 V
Rise Time2000 ns
Half Intensity Angle Degrees120 deg
Maximum Operating Temperature+ 100 C
Minimum Operating Temperature- 40 C
Height2.1 mm
Length16.5 mm
Noise Equivalent Power - NEP2.8E-14 W/sqrt Hz
PackagingBulk
Responsivity0.64 A/W
Factory Pack Quantity10
TypeLow Dark Current (ld) Photodiode
Width15 mm
First Sensor PIN PD Data Sheet
Part Description PS100-6 THD
Order # 500149
Version 24-11-11
Features
• 100 mm² PIN detector
• Low dark current
• High shunt resistance
• High sensitivity
Description
Low dark current PIN photodiode
with 100 mm² square active area.
Non-hermetic ceramic carrier
package with glass window. Epoxy
or silicone potting on special
request.
Application
• Precision photometry
• Analytical instruments
• Medical equipment
• Fluorescence detector
RoHS
2002/95/EC
Absolute maximum ratings
Symbol
T
STG
T
OP
V
max
I
PEAK
Parameter
Storage temp
Operating temp
Max reverse voltage
Peak DC current
Min
-40
-40
Max
125
100
50
10
Unit
°C
°C
V
mA
Spectral response (23 °C)
0,70
0,60
0,50
Responsivity (A/W)
0,40
0,30
0,20
0,10
0,00
Schematic
Pin 2
350
450
550
650
750
850
950
1050
Pin 1
Wavelength (nm)
Electro-optical characteristics @ 23 °C
Symbol
Characteristic
Active area
Active area
Dark current
Capacitance
Responsivity
t
R
Rise time
Test Condition
Min
Typ
Max
10000 x 10000
100
1
10
900
160
0.4
0.64
2000
40
10
150
2.8 E-14
Unit
µm
mm²
nA
pF
pF
A/W
A/W
ns
ns
ns
W/√Hz
V
I
D
C
V
BR
Shunt Resistance
N.E.P.
Breakdown voltage
V
R
= 10 V
V
R
= 0 V
V
R
= 10 V
λ = 632 nm
λ = 900 nm
V
R
= 0 V; λ = 850 nm; R
L
= 50 Ω
V
R
= 10 V; λ = 850 nm; R
L
= 50 Ω
V
R
= 80 V; λ = 850 nm; R
L
= 50 Ω
V
R
= 10 mV
V
R
= 10 V; λ = 900 nm
I
R
= 2 µA
First Sensor AG
Peter-Behrens-Strasse 15
12459 Berlin
Germany
T +49 30 6399 2399
F +49 30 639923-752
sales.opto@first-sensor.com
50
First Sensor Inc.
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
T +1 818 706 3400
F +1 818 889 7053
sales.us@first-sensor.com
European, International Sales:
USA:

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2778  2929  1355  555  505  56  59  28  12  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号