MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
April 2013
MOC216M, MOC217M
Small Outline Surface Mount Phototransistor
Optocouplers
Features
■
U.L. Recognized (File #E90700, Volume 2)
■
VDE Recognized (File #136616)
■
■
■
■
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
(add option “V” for VDE approval, i.e, MOC205VM)
Convenient Plastic SOIC-8 Surface Mountable
Package Style
Low LED Input Current Required for Easier Logic
Interfacing
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
Marking Information
■
MOC216M = 216
■
MOC217M = 217
Applications
■
Low-power Logic Circuits
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
Telecommunications Equipment
■
Portable Electronics
Schematic
Package Outline
ANODE
1
8
N/C
CATHODE
2
7
BASE
Figure 2. Package Outline
N/C
3
6
COLLECTOR
N/C
4
5
EMITTER
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC216M, MOC217M Rev. 1.0.2
www.fairchildsemi.com
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
CBO
V
ECO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
30
70
7.0
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +125
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)
(1)(2)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common.
©2005 Fairchild Semiconductor Corporation
MOC216M, MOC217M Rev. 1.0.2
www.fairchildsemi.com
2
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
V
F
I
R
C
Detector
I
CEO
BV
CEO
BV
ECO
C
CE
Coupled
CTR
Characteristic
Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Output Collector Current
(4)
MOC216M
MOC217M
Collector-Emitter Saturation Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Input-Output Isolation Voltage
(1)(2)(3)
Isolation Resistance
(2)
(2)
Test Conditions
I
F
= 1.0 mA
V
R
= 6.0 V
Min.
Typ.*
1.07
0.001
18
Max.
1.3
100
Unit
V
µA
pF
V
CE
= 5.0 V, T
A
= 25°C
V
CE
= 5.0 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0
I
F
= 1.0 mA, V
CE
= 5.0 V
50
100
I
C
= 100 µA, I
F
= 1.0 mA
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, (Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, (Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, (Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, (Fig. 12)
f = 60 Hz, t = 1.0 minute
V
I-O
= 500 V
V
I-O
= 0, f = 1.0 MHz
2500
10
11
1.0
1.0
30
7.0
100
10
7.0
50
nA
µA
V
V
pF
%
V
CE(sat)
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
0.4
4.0
4.0
3.0
3.0
V
µs
µs
µs
µs
Vac(rms)
Ω
Isolation Capacitance
0.2
pF
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
©2005 Fairchild Semiconductor Corporation
MOC216M, MOC217M Rev. 1.0.2
www.fairchildsemi.com
3
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Typical Performance Curves
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.5
1
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= –55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
0.01
0.1
1
10
100
I
F
– LED INPUT CURRENT (mA)
10
Figure 4. Output Curent vs. Input Current
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
T
A
– AMBIENT TEMPERATURE (°C)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
10000
Figure 6. Output Current vs. Collector-Emitter Voltage
4.0
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
V
CE
= 10 V
1000
3.5
3.0
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100Ω
NORMALIZED TO :
t
on
AT R
BE
= OPEN
NORMALIZED t
on
100
2.5
2.0
1.5
1.0
10
1
0.5
0.0
0.01
0
20
40
60
80
100
0.1
0.1
1
10
100
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
–
BASE RESISTANCE (M
Ω
)
Figure 7. Dark Current vs. Ambient Temperature
Figure 8. Normalized ton vs. RBE
©2005 Fairchild Semiconductor Corporation
MOC216M, MOC217M Rev. 1.0.2
www.fairchildsemi.com
4
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Typical Performance Curves
(Continued)
1.6
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100
Ω
Normalized to:
t
off
at R
BE
= Open
1.0
0.9
I
F
= 10 mA
1.4
0.8
0.7
1.2
NORMALIZED CTR
NORMALIZED t
off
1.0
0.6
0.5
I
F
= 20 mA
I
F
= 5 mA
0.8
0.6
0.4
0.3
0.4
0.2
0.2
0.1
0.0
0.01
0.1
1
10
100
0.0
10
V
CE
= 0.3 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
R
BE
– BASE RESISTANCE (MΩ)
R
BE
– BASE RESISTANCE (kΩ)
Figure 9.
Normalized t
off
vs. R
BE
Figure 10.
CTR vs. R
BE
(Saturated)
1.0
0.9
0.8
I
F
= 10 mA
0.7
NORMALIZED CTR
0.6
0.5
I
F
= 20 mA
I
F
= 5 mA
0.4
0.3
0.2
V
CE
= 5 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
10
100
1000
0.1
0.0
R
BE
– BASE RESISTANCE (kΩ)
Figure 11.
CTR vs. R
BE
(Unsaturated)
TEST CIRCUIT
V
CC
= 10 V
WAVEFORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2 mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC216M, MOC217M Rev. 1.0.2
www.fairchildsemi.com
5
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