TCPT1200
Vishay Semiconductors
Subminiature Transmissive Optical Sensor with Phototransistor
Output, RoHS Compliant, Released for Lead (Pb)-free Solder
Process
Description
The TCPT1200 is a compact transmissive sensor that
includes an infrared emitter and phototransistor
detector, located face-to-face on the optical axes in a
surface mount package.
A
Coll
Cath
E
19154
Features
• Package type: Surface mount
• Detector type: Phototransistor
• Dimensions:
e4
L 5 mm x W 4 mm x H 4 mm
• Gap: 2 mm
• Aperture: 0.3 mm
• Typical output current under test: I
C
= 0.5 mA
• Emitter wavelength: 950 nm
• Lead (Pb)-free soldering released
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity: 2000 pcs, 2000 pcs/reel
Applications
• Accurate position sensor for encoder
• Detection of motion direction
• Computer mouse and trackballs
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Coupler
Parameter
Power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
in accordance with fig. 13
Test condition
T
amb
≤
25 °C
Symbol
P
T
amb
T
stg
T
sd
Value
150
- 40 to + 85
- 40 to + 100
260
Unit
mW
°C
°C
°C
Input (Emitter)
Parameter
Reverse voltage
Forward current
Pulse forward current
Power dissipation
t
p
= 0.1 ms; t
p / T
= 0.01
T
amb
≤
25 °C
Test condition
Symbol
V
R
I
F
I
FP
P
V
Value
5
25
100
75
Unit
V
mA
mA
mW
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
T
amb
≤
25 °C
Test condition
Symbol
V
CEO
V
ECO
I
C
P
V
Value
70
7
20
75
Unit
V
V
mA
mW
Document Number 83753
Rev. 1.9, 13-Mar-07
www.vishay.com
1
TCPT1200
Vishay Semiconductors
200
P - Power Dissipation (mW)
Sensor
150
100
50
Emitter/Detector
0
0
16538
100
75
25
50
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Coupler
Parameter
Collector current
Collector emitter saturation
voltage
Test condition
V
CE
= 5 V, I
F
= 15 mA
I
F
= 15 mA, I
C
= 0.05 mA
Symbol
I
C
V
CEsat
Min
300
Typ.
500
0.4
Max
Unit
µA
V
Input (Emitter)
Parameter
Forward voltage
Reverse current
Junction capacitance
V
R
= 5 V
V
R
= 0 V, f = 1 MHz
Test condition
I
F
= 15 mA
Symbol
V
F
I
R
C
j
50
Min
Typ.
1.2
Max
1.5
10
Unit
V
µA
pF
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test condition
I
C
= 1 mA
I
E
= 100 µA
V
CE
= 25 V, I
F
= 0, E = 0
Symbol
V
CEO
V
ECO
I
CEO
Min
70
7
10
100
Typ.
Max
Unit
V
V
nA
Switching Characteristics
Parameter
Rise time
Fall time
Test condition
I
C
= 0.3 mA, V
CE
= 5 V,
R
L
= 1000
Ω
(see figure 3)
I
C
= 0.3 mA, V
CE
= 5 V,
R
L
= 1000
Ω
(see figure 3)
Symbol
t
r
t
f
Min
Typ.
20.0
30.0
Max
150
150
Unit
µs
µs
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2
Document Number 83753
Rev. 1.9, 13-Mar-07
TCPT1200
Vishay Semiconductors
I
F
0
I
F
I
F
+5
V
I
C
adjusted
by
I
F
0
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 20
T
t
p
= 1 ms
Channel I
Channel II
50
Ω
16536
Oscilloscope
R
L
C
L
1M
20 pF
10 %
0
1000
Ω
t
r
t
d
t
on
pulse duration
delay time
rise time
turn-on time
t
s
t
f
t
off
t
storage time
fall time
turn-off time
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
96 11698
t
s
t
f
t
off
(= t
s
+t
f
)
Figure 2. Test Circuit for t
r
and t
f
Figure 3. Switching Times
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1000
10
V
CE
= 5
V
I
F
- Forward Current (mA)
100
I
C
- Collector Current (mA)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
0.1
1
0.01
0.1
13660
0.001
0.1
13665
V
F
- Forward
Voltage
(V)
10
1
I
F
- Forward Current (mA)
100
Figure 4. Forward Current vs. Forward Voltage
Figure 6. Collector Current vs. Forward Current
V
CEsat
- Coll. Emitter Saturation
Voltage
(V)
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
- 40
- 20
0
20
40
60
80
100
13661
1.3
I
F
= 15 mA
I
C
= 50
µA
I
F
= 15 mA
V
F
- Forward
Voltage
(V)
1.2
1.1
1.0
0.9
0.8
- 40
- 20
0
20
40
60
80
100
13662
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Figure 5. Collector Emitter Saturation Voltage vs.
Ambient Temperature
Figure 7. Forward Voltage vs. Ambient Temperature
Document Number 83753
Rev. 1.9, 13-Mar-07
www.vishay.com
3
TCPT1200
Vishay Semiconductors
1.0
0.9
I
C
- Collector Current (mA)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 40 - 20
13663
100
V
CE
= 5
V
I
F
= 15 mA
t
r
/ t
f
- Rise/Fall Time (µs)
90
80
70
60
50
40
30
20
10
0
t
r
0 250 500 750 1000 1250 1500 1750 2000
16552
I
F
= 5 mA
t
f
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
I
C
- Collector Current (µA)
Figure 8. Collector Current vs. Ambient Temperature
Figure 11. Rise/Fall Time vs. Collector Current
10000
I
CEO
- Collector Dark Current (nA)
V
CE
= 10
V
I
F
= 0
1000
I
F
= 15 mA
+
V
C
= 5
V
100
74HCT14
10
10 kΩ
1
0
96 11875
V
E
U
Q
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
GND
13887
Figure 9. Collector Dark Current vs. Ambient Temperature
Figure 12. Application example
1.25
I
Crel
- Relative Collector Current
s
1.00
0.75
0.50
0.25
0.00
- 1.5
- 1.0
- 0.5 0.0
0.5
1.0
1.5
13658
s - Displacement (mm)
Figure 10. Relative Collector Current vs. Displacement
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4
Document Number 83753
Rev. 1.9, 13-Mar-07
TCPT1200
Vishay Semiconductors
Reflow Solder Profiles
Drypack
Devices are packed in moisture barrier bags (MBB) to
prevent the products from absorbing moisture during
transportation and storage. Each bag contains a des-
iccant.
280
260
240
19152
260
°C
230
°C
4
°C/s
MAX
4
°C/s
MAX
180
°C
150
°C
Pre-heating time:
90 ± 30 s
Heating time:
30 ± 10 s
Temperature (°C)
220
200
180
160
140
120
100
80
Floor Life
Floor life (time between soldering and removing from
MBB) must not exceed the time indicated in
J-STD-020. According JEDEC, J-STD-020, this com-
ponent is released to Moisture Sensitivity Level 2, for
use of Lead Tin (SnPb) Reflow Solder Profile
(Figure 14) or Level 3, for use of Lead (Pb)-free (Sn)
Reflow Solder Profile (Figure 13).
Floor Life: 12 month (Level 2) or 168 hours (Level 3)
Floor Conditions: T
amb
< 30 °C, RH < 60
%
Time (s)
Figure 13. Lead (Pb)-free (Sn) Reflow Solder Profile
Drying
280
260
240
19153
240
°C
230
°C
4
°C/s
MAX
4
°C/s
MAX
180
°C
150
°C
Pre-heating time:
90 ± 30 s
Heating time:
10 - 20 s
Temperature (°C)
220
200
180
160
140
120
100
80
In case of moisture absorption, devices should be
baked before soldering. Conditions see J-STD-020 or
Label. Devices taped on reel dry using recommended
conditions 192 h at 40 °C (± 5 °C), RH < 5
%
or 96 h
at 60 °C (± 5 °C), RH < 5
%.
Time (s)
Figure 14. Lead Tin (SnPb) Reflow Solder Profile
Document Number 83753
Rev. 1.9, 13-Mar-07
www.vishay.com
5
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