VLMU5200-...-140
www.vishay.com
Vishay Semiconductors
UV SMD LED with Silicone Lens
FEATURES
• Ceramic SMT package with silicone lens
• Dimensions (L x W x H) in mm: 5.2 x 5.2 x 3.1
• Forward current: up to 700 mA
• Radiant power (typ.): 2500 mW at 500 mA,
3600 mW at 700 mA
• Materials:
- Die: InGaN
- Resin: silicone (water clear)
- L / F finish: AIN with Au plating
• Grouping parameters:
- Radiant power
- Peak wavelength
- Forward voltage
• Reflow soldering method
• MSL2 according to J-STD-020
• Packaging: 12 mm tape with 100 pieces per reel,
Ø 180 mm (7")
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VLMU5200-...-140 series comprises 3 high brightness
UV LED types within an overall wavelength range from
380nm to 410nm. The ceramic based high power package
with silicone lens features a good longterm stability against
thermal exposure and UV light irradiation and therefore
a long life time. The package size is 5.2 mm x 5.2 mm x
3.1 mm, and the radiant power up to 4400 mW at 700 mA,
with 4 LED chips connected in series.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD ceramic high power
• Product series: high power UV LED
• Angle of half intensity: ± 70°
• Lead-finishing: Au
APPLICATIONS
• Industrial curing
• Photocatalytic purification
• Poster printing curing
• Counterfeit money detector
• Blood detector
• Nail curing
• Teeth curing
SAFETY ADVICES
Depending on the mode of operation, these devices emit
highly concentrated non visible ultraviolet light which can be
hazardous to the human eye. Products which incorporate
these devices have to follow the safety precautions given in
IEC 62471 “Photobiological Safety of Lamp and Lamp
Systems”.
PARTS TABLE
PART
COLOR
RADIANT POWER
(mW)
MIN. TYP. MAX.
VLMU5200-385-140
VLMU5200-395-140
VLMU5200-405-140
Ultraviolet 1800 2500
Ultraviolet 1800 2500
Ultraviolet 1800 2500
3300
3300
3300
at
I
F
(mA)
500
500
500
WAVELENGTH
(nm)
MIN. TYP. MAX.
380
390
400
385
395
405
390
400
410
at
I
F
(mA)
500
500
500
FORWARD
VOLTAGE
(V)
MIN. TYP. MAX.
13
13
13
14.5
14.5
14.5
16
16
16
at
I
F
(mA)
500
500
500
TECHNOLOGY
InGaN
InGaN
InGaN
Rev. 1.2, 23-May-16
Document Number: 84832
1
For technical questions, contact:
LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLMU5200-...-140
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
VLMU5200-...-140
PARAMETER
DC forward current
Power dissipation
Electrostatic discharge
Junction temperature
Operating temperature range
Storage temperature range
Solder temperature
Thermal resistance - junction to solder point
HBM: MIL-STD-883 C 3B
TEST CONDITION
SYMBOL
I
F
P
V
ESD
T
j
T
amb
T
stg
T
sol
R
thJS
VALUE
700
11.2
2000
+150
-40 to +85
-40 to +100
260
2.4
UNIT
mA
W
V
°C
°C
°C
°C
°C/W
OPTICAL AND ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
VLMU5200-...-140, ULTRAVIOLET
PARAMETER
Forward voltage
Radiant power
Ratio: radiant intensity /
radiant power
Peak wavelength
Angle of half intensity
TEST CONDITION
I
F
= 500 mA
I
F
= 350 mA
I
F
= 500 mA
I
F
= 700 mA
I
F
= 500 mA
VLMU5200-385-140
I
F
= 500 mA
I
F
= 500 mA
VLMU5200-395-140
VLMU5200-405-140
p
l
e
e
DEVICE TYPE
SYMBOL
V
F
MIN.
13.0
1300
1800
2480
-
380
390
400
-
TYP.
14.5
1950
2500
3600
0.28
385
395
405
± 70
MAX.
16.0
2350
3300
4400
-
390
400
410
-
sr
-1
nm
nm
nm
deg
mW
UNIT
V
Note
• Tolerances: ± 11 % for
e
, ± 0.1 V for V
F
, ± 2 nm for
p
.
RADIANT POWER CLASSIFICATION
(I
F
= 500 mA)
GROUP
PA8
PA9
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
PB8
PB9
PC0
PC1
PC2
MIN.
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
MAX.
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
mW
UNIT
Rev. 1.2, 23-May-16
Document Number: 84832
2
For technical questions, contact:
LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLMU5200-...-140
www.vishay.com
Vishay Semiconductors
MIN.
380
385
390
395
400
405
MAX.
385
390
395
400
405
410
nm
UNIT
PEAK WAVELENGTH CLASSIFICATION
(I
F
= 500 mA)
GROUP
Q380
Q385
Q390
Q395
Q400
Q405
FORWARD VOLTAGE CLASSIFICATION
(I
F
= 500 mA)
GROUP
W1314
W1415
W1516
MIN.
13.0
14.0
15.0
MAX.
14.0
15.0
16.0
V
UNIT
Note
• In order to ensure availability, single groups for radiant intensity, wavelength, and forward voltage will not be orderable. Only one group for
radiant intensity, wavelength, and forward voltage will be shipped in any one reel.
MARKING EXAMPLE FOR SELECTION CODE ON LABEL
Selection code: PA9Q385W1415
PA9
e
Q385
p
W1415
V
F
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
φ
e rel.
- Relative Radiant Power (%)
140
800
I
F
- Forward Current (mA)
120
100
80
60
40
20
0
0
100 200 300 400 500 600 700 800
700
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
16
I
F
- Forward Current (mA)
Fig. 1 - Relative Radiant Power vs. Forward Current
V
F
- Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.2, 23-May-16
Document Number: 84832
3
For technical questions, contact:
LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLMU5200-...-140
www.vishay.com
Vishay Semiconductors
10000
2nd line
Φ
e rel
- Relative Radiant Flux
Axis Title
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
Axis Title
2nd line
Δλ
p
- Change of Peak Wavelength (nm)
30°
6
4
2
0
-2
-4
-6
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
Axis Title
3
2nd line
dV
F
- Change of Forward Voltage (V)
2
1
0
-1
-2
-3
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
10000
10000
10000
Axis Title
100
2nd line
Relative Spectral Power (%)
395 nm
80
385 nm
405 nm
1000
1st line
2nd line
100
10
60
40
20
0
340
360
380
400
420
440
460
Wavelength (nm)
2nd line
Fig. 3 - Relative Spectral Power vs. Wavelength
Fig. 6 - Relative Radiant Flux vs. Ambient Temperature
0°
10°
20°
I
e, rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
ϕ
- Angular Displacement
Fig. 4 - Relative Intensity vs. Wavelength
Fig. 7 - Change of Peak Wavelength vs. Ambient Temperature
I
F max.
- Max. Forward Current (mA)
1000
900
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100 120 140 160
R
thJA
= 10 °C/W
R
thJA
= 15 °C/W
T
amb
- Ambient Temperature (°C)
Fig. 5 - Maximum Forward Current vs. Ambient Temperature
Fig. 8 - Change of Forward Voltage vs. Ambient Temperature
Rev. 1.2, 23-May-16
Document Number: 84832
4
For technical questions, contact:
LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VLMU5200-...-140
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
4.8
3.8
2.8
0.6
Electrically neutral
thermal pad
Technical drawings
according to DIN
specification.
3
1
0.6
3
1
2
4.2
4.9
3.6
4
4
2
Recommended
solder
pad footprint
0.3 x 45°
Cathode
Anode
R2.4
3.1
4.9
4.2
3.6
0.5
5.2
0.6
2.8
3.8
4.8
5.2
Not indicated tolerances ± 0.13
Drawing-No.: 6.541-5109.01-4
Issue: prel; 23.05.16
Cathode mark
Rev. 1.2, 23-May-16
Document Number: 84832
5
For technical questions, contact:
LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6
京公网安备 11010802033920号
EEWORLD
