MT28F160C3 datasheet, PDF - EEWORLD Datasheet

ADVANCE

‡

1 MEG x 16

3V ENHANCED+ BOOT BLOCK FLASH MEMORY

FLASH MEMORY

FEATURES

• Thirty-nine erase blocks:

Eight 4K-word parameter blocks

Thirty-one 32K-word main memory blocks

• V

CC

, V

CC

Q and V

PP

voltages:

2.7V–3.3V V

CC

2.7V–3.3V V

CC

Q*

1.65V–3.3V and 12V V

PP

• Address access times:

90ns, 110ns at 2.7V–3.3V

• Low power consumption:

Standby and deep power-down mode < 1µA

(typical I

CC

)

Automatic power saving feature (APS mode)

• Enhanced WRITE/ERASE SUSPEND (1µs typical)

• 128-bit OTP area for security purposes

• Industry-standard command set compatibility

• Software/hardware block protection

MT28F160C3

Low Voltage, Extended Temperature

BALL ASSIGNMENT (Top View)

46-Ball FBGA

1

A

B

C

D

E

F

A13

2

A11

3

A8

4

V

PP

5

WP#

6

A19

7

A7

8

A4

A14

A10

WE#

RP#

A18

A17

A5

A2

A15

A12

A9

A6

A3

A1

A16

DQ14

DQ5

DQ11

DQ2

DQ8

CE#

A0

V

CC

Q

DQ15

DQ6

DQ12

DQ3

DQ9

DQ0

V

SS

V

SS

DQ7

DQ13

DQ4

V

CC

DQ10

DQ1

OE#

OPTIONS

• Timing

90ns access

110ns access

• Boot Block Starting Address

Top (FFFFFH)

Bottom (00000H)

• Package

46-ball FBGA (6 x 8 ball grid)

• Temperature Range

Commercial (0°C to +70°C)

Extended (-40°C to +85°C)

*Lower V

CC

Q ranges are available upon request.

Part Number Example:

NUMBER

-9

-11

T

B

FD

None

ET

(Ball Down)

NOTE:

See page 3 for Ball Description Table.

See last page for mechanical drawing.

MT28F160C3FD-11 TET

has an I/O supply of 2.7V (MIN). Programming in pro-

duction is accomplished by using high voltage which can

be supplied on a separate line.

The embedded WORD WRITE and BLOCK ERASE

functions are fully automated by an on-chip write state

machine (WSM), which simplifies these operations and

relieves the system processor of secondary tasks. The

WSM status can be monitored by an on-chip status reg-

ister to determine the progress of program/erase tasks.

The device is equipped with 128 bits of one time

programmable (OTP) area. The soft protection feature

for blocks will mark them as read-only by configuring soft

protection registers with command sequences.

Please refer to Micron’s Web site (www.micron.com/

flash)

for the latest data sheet.

GENERAL DESCRIPTION

The MT28F160C3 is a nonvolatile, electrically block-

erasable (flash), programmable, read-only memory con-

taining 16,777,216 bits organized as 1,048,576 words (16

bits).

The MT28F160C3 is manufactured on 0.22µm pro-

cess technology in a 48-ball FBGA package. The device

1 Meg x 16 3V Enhanced+ Boot Block Flash Memory

MT28F160C3_3.p65 – Rev. 3, Pub. 8/01

DEVICE MARKING

Due to the size of the package, Micron’s standard part

number is not printed on the top of each device. Instead,

an abbreviated device mark comprised of a five-digit

alphanumeric code is used. The abbreviated device marks

are cross referenced to Micron part numbers in Table 1.

1

‡

PRODUCTS

AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND

ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET

MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

ADVANCE

1 MEG x 16

3V ENHANCED+ BOOT BLOCK FLASH MEMORY

ARCHITECTURE

The MT28F160C3 flash contains eight 4K-word

parameter blocks and thirty-one 32K-word blocks.

Memory is organized by using a blocked architecture to

allow independent erasure of selected memory blocks.

Any address within a block address range selects that

block for the required READ, WRITE, or ERASE operation

(see Figures 1 and 2).

Table 1

Cross Reference for Abbreviated

Device Marks

1

PART NUMBER

MT28F160C3FD-9 BET

MT28F160C3FD-9 TET

MT28F160C3FD-11 BET

MT28F160C3FD-11 TET

PRODUCT

MARKING

FW610

FW611

FW612

FW613

SAMPLE

MARKING

FX610

FX611

FX612

FX613

NOTE:

1. The mechanical sample marking is FY610.

FUNCTIONAL BLOCK DIAGRAM

DQ0–DQ15

X DEC

Data Input

Buffer

Data

Register

RP#

CE#

WE#

OE#

Y/Z DEC

Bank

a

Blocks

Y/Z Gating/Sensing

ID

Reg.

CSM

Status

Reg.

WSM

Program/

Erase Change

Pump Voltage

Switch

Output

Multiplexer

DQ0–DQ15

Output

Buffer

I/O Logic

Data

Comparator

A0–A19

Address

Input

Buffer

APS

Control

Address

CNT WSM

Address

Multiplexer

Y/Z DEC

X DEC

Y/Z Gating/Sensing

Bank

b

Blocks

Address Latch

1 Meg x 16 3V Enhanced+ Boot Block Flash Memory

MT28F160C3_3.p65 – Rev. 3, Pub. 8/01

2

Micron Technology, Inc., reserves the right to change products or specifications without notice.

ADVANCE

1 MEG x 16

3V ENHANCED+ BOOT BLOCK FLASH MEMORY

BALL DESCRIPTIONS

46-BALL FBGA

NUMBERS

SYMBOL

3B

WE#

TYPE

Input

DESCRIPTION

Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is

LOW, the cycle is either a WRITE to the command state machine (CSM)

or to the memory array.

Write Protect: Unlocks the soft-protected blocks when HIGH if V

PP

=

1.65V–3.3V or 12V and RP# = V

IH

for WRITE or ERASE. Does not affect

WRITE or ERASE operation on other blocks.

Chip Enable: Activates the device when LOW. When CE# is HIGH, the

device is disabled and goes into standby power mode.

Reset/Power-Down: When LOW, RP# clears the status register, sets the

write state machine (WSM) to the array read mode and places the

device in deep power-down mode. All inputs, including CE#, are “Don’t

Care,” and all outputs are High-Z. RP# must be held at V

IH

during all

other modes of operation.

Output Enable: Enables data output buffers when LOW. When OE# is

HIGH, the output buffers are disabled.

Address Inputs: These address inputs select a unique, 16-bit word out

of the 1,048,576 available.

5A

WP#

Input

7D

4B

CE#

RP#

Input

8F

1A, 1B, 1C, 1D,

2A, 2B, 2C, 3A,

3C, 5B, 6A, 6B,

6C, 7A, 7B, 7C,

8A, 8B, 8C, 8D

OE#

A0-A19

Input

2D, 2E, 2F, 3D, DQ0-DQ15

3E, 3F, 4D, 4E,

4F, 5D, 5E, 6D,

6E, 6F, 7E, 7F

4A

V

PP

Input/

Output

Data I/O: These data I/O are data output lines during any READ

operation or data input lines during a WRITE. Data I/O are used to

input commands to the CSM.

Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until

completion of the operation, V

PP

must be 1.65V–3.3V or 12V. V

PP

=

“Don’t Care” during all other operations.

Power Supply: 2.7V–3.3V.

I/O Supply Voltage: 2.7V–3.3V.

Ground.

Supply

5F

1E

1F, 8E

V

CC

V

CC

Q

V

SS

Supply

1 Meg x 16 3V Enhanced+ Boot Block Flash Memory

MT28F160C3_3.p65 – Rev. 3, Pub. 8/01

3

Micron Technology, Inc., reserves the right to change products or specifications without notice.

ADVANCE

1 MEG x 16

3V ENHANCED+ BOOT BLOCK FLASH MEMORY

TRUTH TABLE

1

FUNCTION

Standby

RESET

READING

READ

Output Disable

WRITE/ERASE (EXCEPT SOFT PROTECTED BLOCKS)

2

ERASE SETUP

ERASE CONFIRM

3

WRITE SETUP

WRITE

4

READ ARRAY

5

WRITE/ERASE (SOFT-PROTECTED BLOCKS)

2

ERASE SETUP

ERASE CONFIRM

3

WRITE SETUP

WRITE

4

READ ARRAY

5

DEVICE IDENTIFICATION

6

Manufacturer

Device (top boot)

Device (bottom boot)

NOTE:

1.

2.

3.

4.

5.

6.

RP#

H

L

H

CE#

H

X

L

OE#

X

L

H

L

WE#

X

H

L

H

WP#

X

H

X

H

X

V

PP

X

V

PPH

X

V

PPH

X

V

PPH

X

V

PPH

X

A0

X

L

H

DQ0-DQ7 DQ8-DQ15

High-Z

Data-Out

High-Z

20H

D0H

10H/40H

Data-In

FFH

20H

D0H

10H/40H

Data-In

FFH

2CH

92H

93H

High-Z

Data-Out

High-Z

X

Data-In

X

Data-In

X

00H

44H

L = V

IL

(LOW), H = V

IH

(HIGH), X = V

IL

or V

IH

(“Don’t Care”).

V

PPH1

= 1.65V–3.3V and V

PPH2

= 12V.

Operation must be preceded by ERASE SETUP command.

Operation must be preceded by WRITE SETUP command.

The READ ARRAY command must be issued before reading the array after writing or erasing.

See Table 3 for the IDENTIFY DEVICE command.

1 Meg x 16 3V Enhanced+ Boot Block Flash Memory

MT28F160C3_3.p65 – Rev. 3, Pub. 8/01

4

Micron Technology, Inc., reserves the right to change products or specifications without notice.

ADVANCE

1 MEG x 16

3V ENHANCED+ BOOT BLOCK FLASH MEMORY

Figure 1

Top Boot Block Memory Address Map

ADDRESS RANGE

FFFFFh

F8000h

F7FFFh

F0000h

EFFFFh

E8000h

E7FFFh

E0000h

DFFFFh

D8000h

D7FFFh

D0000h

CFFFFh

C8000h

C7FFFh

C0000h

BFFFFh

B8000h

B7FFFh

B0000h

AFFFFh

A8000h

A7FFFh

A0000h

9FFFFh

98000h

97FFFh

90000h

8FFFFh

88000h

87FFFh

80000h

7FFFFh

78000h

77FFFh

70000h

6FFFFh

68000h

67FFFh

60000h

5FFFFh

58000h

57FFFh

50000h

4FFFFh

48000h

47FFFh

40000h

3FFFFh

38000h

37FFFh

30000h

2FFFFh

28000h

27FFFh

20000h

1FFFFh

18000h

17FFFh

10000h

0FFFFh

08000h

07FFFh

00000h

8 x 4K-Word Blocks

32K-Word Block

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

4K-Word Block

Parameter

Blocks

4K-Word Block

FFFFFh

FF000h

FEFFFh

FE000h

FDFFFh

FD000h

FCFFFh

FC000h

FBFFFh

FB000h

FAFFFh

FA000h

F9FFFh

F9000h

F8FFFh

F8000h

1 Meg x 16 3V Enhanced+ Boot Block Flash Memory

MT28F160C3_3.p65 – Rev. 3, Pub. 8/01

5

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT28F160C3

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